RESUMO
Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889-1.423 Ω for 2-8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.
RESUMO
We describe two example pilot efforts to help define new thermoluminescent dosimeter media. The first concerns ZnS:Mn nanophosphors, prepared by chemical precipitation using zinc and sodium sulfate, doped with manganese sulfate at concentrations varying from 1 to 3mol. The second concerns chemical vapor deposited diamond, produced as a thin film or as amorphous carbon on a single-crystal silicon substrate, each deposited under the same conditions, use being made of the hot filament-chemical vapor deposition (HFCVD) technique. The gas concentrations used were 1% CH4 in 99% H2 and 25% CH4 in 75% H2. Characterization of formations used FESEM, XRD and EDX. The nanophosphors consisted of particles of sizes in the range 85-150nm, the thermoluminescence (TL)-based radiation detection medium giving rise to a single peaked glow curve of maximum yield at a temperature of 250°C at a heating rate of 5°C/s. The TL response increased linearly with radiation dose, ZnS doped to 2mol of Mn being found the most sensitive. Regarding chemical vapor deposited (CVD) carbon, inappreciable TL was found for the resultant ball-like amorphous carbon films, graphite, and the silicon substrate, whereas CVD diamond films showed a promising degree of linearity with dose. For both the ZnS and diamond samples, TL signal fading was appreciable, being some 40% per day for ZnS and>50% per day for CVD films even under storage in the dark at room temperature, making it apparent that there is need to adjust parameters such as the size of nanoparticles.
