Integrated O- and C-band silicon-lithium niobate Mach-Zehnder modulators with 100 GHz bandwidth, low voltage, and low loss.

Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and demonstrate Mach-Zehnder (MZ) EOM devices in a hybrid platform based on TFLN bonded to foundry-fabricated silicon photonic waveguides. Using a single silicon lithography step and a single bonding step, we realize MZ EOM devices which cover both wavelength ranges on the same chip. The EOM devices achieve 100 GHz EO bandwidth (referenced to 1 GHz) and about 2-3 V.cm figure-of-merit (V π L) with low on-chip optical loss in both the O-band and C-band.

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator.

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a [Formula: see text] product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.

High-speed silicon microresonator modulators with high optical modulation amplitude (OMA) at input powers >10†mW.

A high-speed silicon photonic microdisc modulator is used with more than 10 mW optical power in the bus waveguide, extending the optical power handling regime used with compact silicon resonant modulators at 1550 nm. We present an experimental study of the wavelength tuning range and biasing path required to shift the resonant frequency to the optimal point versus on chip power. We measure the optical modulation amplitude (OMA) along different biasing trajectories of the microdisc under active modulation and demonstrate an OMA of 4.1 mW with 13.5 mW optical power in the bus waveguide at 20 Gbit/s non-return to zero (NRZ) data modulation.

Shallow-etched thin-film lithium niobate waveguides for highly-efficient second-harmonic generation.

High-fidelity periodic poling over long lengths is required for robust, quasi-phase-matched second-harmonic generation using the fundamental, quasi-TE polarized waveguide modes in a thin-film lithium niobate (TFLN) waveguide. Here, a shallow-etched ridge waveguide is fabricated in x-cut magnesium oxide doped TFLN and is poled accurately over 5 mm. The high fidelity of the poling is demonstrated over long lengths using a non-destructive technique of confocal scanning second-harmonic microscopy. We report a second-harmonic conversion efficiency of up to 939 %.W-1 (length-normalized conversion efficiency 3757 %.W-1.cm-2), measured at telecommunications wavelengths. The device demonstrates a narrow spectral linewidth (1 nm) and can be tuned precisely with a tuning characteristic of 0.1 nm/°C, over at least 40 °C without measurable loss of efficiency.

High Quality Entangled Photon Pair Generation in Periodically Poled Thin-Film Lithium Niobate Waveguides.

A thin-film periodically poled lithium niobate waveguide was designed and fabricated which generates entangled photon pairs at telecommunications wavelengths with high coincidences-to-accidentals counts ratio CAR>67000, two-photon interference visibility V>99%, and heralded single-photon autocorrelation g_{H}^{(2)}(0)<0.025. Nondestructive in situ diagnostics were used to determine the poling quality in 3D. Megahertz rates of photon pairs were generated by less than a milliwatt of pump power, simplifying the pump requirements and dissipation compared to traditional spontaneous parametric down-conversion lithium niobate devices.

Optical diagnostic methods for monitoring the poling of thin-film lithium niobate waveguides.

We demonstrate two non-destructive methods of studying the gradual poling of thin-film lithium niobate waveguides by the application of a sequence of high-voltage pulses, and we show the transition from under-poling to over-poling and the identification of the optimal stopping point of the poling process. The first diagnostic method is based on changes in continuous-wave light transmission through a hybrid waveguide as it is gradually poled by using a second set of monitoring electrodes fabricated alongside the principal poling electrodes. The second method is based on confocal back-reflected second-harmonic microscopy by using femtosecond optical probe pulses. The results from the two methods are in agreement with each other and may be useful as non-destructive in situ diagnostic methods for optimized poling of integrated waveguides.

Bonded thin film lithium niobate modulator on a silicon photonics platform exceeding 100 GHz 3-dB electrical modulation bandwidth.

We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM), based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and wafer-scale fabrication, oxide-bonded at 200C to a lithium niobate (LN) thin film. Our design integrates silicon photonics light input/output and optical components, such as directional couplers and low-radius bends. No etching or patterning of the thin film LN is required. This hybrid Si-LN MZM achieves beyond 106 GHz 3-dB electrical modulation bandwidth, the highest of any silicon photonic or lithium niobate (phase) modulator.

Photon-pair and heralded single photon generation initiated by a fraction of a 10 Gbps data stream.

A fraction of a classical 10 Gigabits-per-second, non-return-to-zero data stream at 1.55 micron wavelengths from a standard telecommunications optical transceiver was tapped and used to generate photon-pairs and heralded single photons using a silicon microring resonator at room temperature. These results show that there may be no need for a separate laser to generate high-quality photon pairs for quantum applications in a typical optical communications network.

Performance comparisons between semiconductor and fiber amplifier gain assistance in a recirculating frequency shifter.

Recirculating frequency shifter (RFS) loops can be used for electronically programmable, variable-spacing multiline spectrum generation, which can benefit the development of fully flexible optical communications and other frequency comb applications. Here, we report on and explain the observation of significant performance variations between chip-based gain in semiconductor optical amplifiers (SOA) and fiber-based gain in erbium-doped fiber amplifiers (EDFA) when used as the gain element in the RFS. Previously, SOAs and EDFAs have been demonstrated in different RFS experiments and studied separately from each other; thus, discussion mainly focused on the noise from amplified spontaneous emission. We show that SOA effects, including four wave mixing, can be measured, which impose limits to the wavelength spacing of the combs, and that this effect is mitigated by increasing the RF drive frequency of the RFS and operating SOA in deeper saturation.

Compact silicon photonic resonance-sssisted variable optical attenuator.

A two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. We derive and discuss a simple thermal-resistance model in explanation of these effects.

Wide-range and fast thermally-tunable silicon photonic microring resonators using the junction field effect.

Tunable silicon microring resonators with small, integrated micro-heaters which exhibit a junction field effect were made using a conventional silicon-on-insulator (SOI) photonic foundry fabrication process. The design of the resistive tuning section in the microrings included a "pinched" p-n junction, which limited the current at higher voltages and inhibited damage even when driven by a pre-emphasized voltage waveform. Dual-ring filters were studied for both large (>4.9 THz) and small (850 GHz) free-spectral ranges. Thermal red-shifting was demonstrated with microsecond-scale time constants, e.g., a dual-ring filter was tuned over 25 nm in 0.6 µs 10%-90% transition time, and with efficiency of 3.2 µW/GHz.

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics.

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.

Photon pair generation from compact silicon microring resonators using microwatt-level pump powers.

Microring resonators made from silicon are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than 5 × 10(-4) mm2, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-velocity dispersion and the ring-waveguide coupling coefficient in finding the optimum operating point for silicon microring pair generation. Silicon photonics can be fabricated using deep ultraviolet lithography wafer-scale fabrication processes, which is scalable and cost-effective. Such small devices and low pump power requirements, and the side-coupled waveguide geometry which uses an integrated waveguide, could be beneficial for future scaled-up architectures where many pair-generation devices are required on the same chip.

Entanglement measurement of a coupled silicon microring photon pair source.

Using two-photon (Franson) interferometry, we measure the entanglement of photon pairs generated from an optically-pumped silicon photonic device consisting of a few coupled microring resonators. The pair-source chip operates at room temperature, and the InGaAs single-photon avalanche detectors (SPADs) are thermo-electrically cooled to 234K. Such a device can be integrated with other components for practical entangled photon-pair generation at telecommunications wavelengths.

Controlling the spectrum of photons generated on a silicon nanophotonic chip.

Directly modulated semiconductor lasers are widely used, compact light sources in optical communications. Semiconductors can also be used to generate nonclassical light; in fact, CMOS-compatible silicon chips can be used to generate pairs of single photons at room temperature. Unlike the classical laser, the photon-pair source requires control over a two-dimensional joint spectral intensity (JSI) and it is not possible to process the photons separately, as this could destroy the entanglement. Here we design a photon-pair source, consisting of planar lightwave components fabricated using CMOS-compatible lithography in silicon, which has the capability to vary the JSI. By controlling either the optical pump wavelength, or the temperature of the chip, we demonstrate the ability to select different JSIs, with a large variation in the Schmidt number. Such control can benefit high-dimensional communications where detector-timing constraints can be relaxed by realizing a large Schmidt number in a small frequency range.

Silicon microring-based wavelength converter with integrated pump and signal suppression.

We fabricate a two-stage wavelength converter in silicon by cascading a microring wavelength mixer with a five-ring coupled-resonator filter. A p-i-n diode is incorporated into the microring for electronic carrier sweep-out, and microheaters are incorporated into the filter for tunability. The generated idler wavelength is effectively separated from the input pump and signal, with nearly 50 dB of suppression.

Wideband silicon-photonic thermo-optic switch in a wavelength-division multiplexed ring network.

Using a compact (0.03 mm(2)) silicon-photonic bias-free thermo-optic cross-bar switch, we demonstrate microsecond-scale switching of twenty wavelength channels of a C-band wavelength-division multiplexed optical ring network, each carrying 10 Gbit/second data concurrently, with 15 mW electrical power consumption (no temperature control required). A convenient pulsed driving scheme is demonstrated and eye patterns and bit-error rate measurements are shown. An algorithm is developed to measure the power-division ratio between the two output ports, the insertion and switching losses, and non-ideal phase deviations.

Electronic control of optical Anderson localization modes.

Anderson localization of light has been demonstrated in a few different dielectric materials and lithographically fabricated structures. However, such localization is difficult to control, and requires strong magnetic fields or nonlinear optical effects, and electronic control has not been demonstrated. Here, we show control of optical Anderson localization using charge carriers injected into more than 100 submicrometre-scale p-n diodes. The diodes are embedded into the cross-section of the optical waveguide and are fabricated with a technology compatible with the current electronics industry. Large variations in the output signal, exceeding a factor of 100, were measured with 1 V and a control current of 1 mA. The transverse footprint of our device is only 0.125 µm(2), about five orders of magnitude smaller than optical two-dimensional lattices. Whereas all-electronic localization has a narrow usable bandwidth, electronically controlled optical localization can access more than a gigahertz of bandwidth and creates new possibilities for controlling localization at radiofrequencies, which can benefit applications such as random lasers, optical limiters, imagers, quantum optics and measurement devices.

Spectrally multiplexed and tunable-wavelength photon pairs at 1.55 µm from a silicon coupled-resonator optical waveguide.

Using a compact optically pumped silicon nanophotonic chip consisting of coupled silicon microrings, we generate photon pairs in multiple pairs of wavelengths around 1.55 µm. The wavelengths are tunable over several nanometers, demonstrating the capability to generate wavelength division multiplexed photon pairs at freely chosen telecommunications-band wavelengths.

Quantum light generation on a silicon chip using waveguides and resonators.

Integrated optical devices may replace bulk crystal or fiber based assemblies with a more compact and controllable photon pair and heralded single photon source and generate quantum light at telecommunications wavelengths. Here, we propose that a periodic waveguide consisting of a sequence of optical resonators can outperform conventional waveguides or single resonators and generate more than 1 Giga-pairs per second from a sub-millimeter-long room-temperature silicon device, pumped with only about 10 milliwatts of optical power. Furthermore, the spectral properties of such devices provide novel opportunities for chip-scale quantum light sources.