Whispering gallery germanium-on-silicon photodetector.

We design and demonstrate, to the best of our knowledge, the first whispering gallery germanium-on-silicon photodetector with evanescent coupling from a silicon bus waveguide in a CMOS-compatible process. The small footprint (63.6 µm2), high responsivity (∼1.04 A/W at 1530 nm), low bias voltage (-1 V), low dark current (2.03 nA), and large optoelectric bandwidth (32.9 GHz) of the detector enable simultaneous wavelength filtering and power detection, ideal for handling large network data traffic. In addition, with the resonant nature of the detector, we also optimize the design to enable long-wavelength detection, achieving a separate device with a detection range of up to 1630 nm with a >0.45 A/W responsivity, making it an important building block for optical communication networks.

Ultra-narrow-linewidth Al2O3:Er3+ lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform.

We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infra-red wavelengths (950-2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔνQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (R-SHDI).

Wavelength division multiplexed light source monolithically integrated on a silicon photonics platform.

We demonstrate monolithic integration of a wavelength division multiplexed light source for silicon photonics by a cascade of erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers. Four DFB lasers with uniformly spaced emission wavelengths are cascaded in a series to simultaneously operate with no additional tuning required. A total output power of -10.9 dBm is obtained from the four DFBs with an average side mode suppression ratio of 38.1±2.5 dB. We characterize the temperature-dependent wavelength shift of the cascaded DFBs and observe a uniform dλ/dT of 0.02 nm/°C across all four lasers.

Integrated heterodyne interferometer with on-chip modulators and detectors.

We demonstrate, to our knowledge, the first on-chip heterodyne interferometer fabricated on a 300-mm CMOS compatible process that exhibits root-mean-square (RMS) position noise on the order of 2 nm. Measuring 1 mm by 6 mm, the interferometer is also, to our knowledge, the smallest heterodyne interferometer demonstrated to date and will surely impact numerous interferometric and metrology applications, including displacement measurement, laser Doppler velocimetry and vibrometry, Fourier transform spectroscopy, imaging, and light detection and ranging (LIDAR). Here we present preliminary results that demonstrate the displacement mode.

Generating and identifying optical orbital angular momentum with silicon photonic circuits.

Here, we propose and demonstrate a silicon nanophotonic phased array that is capable of generating light carrying optical orbital angular momentum (OAM). Optical beams carrying different orbital angular momenta have been generated. In addition, the generated OAM wavefronts are experimentally identified by interfering with another on-chip generated Gaussian beam, opening up opportunities of integrating conventional optical systems and functionalities on to a silicon chip.

Integrated phased array for wide-angle beam steering.

We demonstrate an on-chip optical phased array fabricated in a CMOS compatible process with continuous, fast (100 kHz), wide-angle (51°) beam-steering suitable for applications such as low-cost LIDAR systems. The device demonstrates the largest (51°) beam-steering and beam-spacing to date while providing the ability to steer continuously over the entire range. Continuous steering is enabled by a cascaded phase shifting architecture utilizing, low power and small footprint, thermo-optic phase shifters. We demonstrate these results in the telecom C-band, but the same design can easily be adjusted for any wavelength between 1.2 and 3.5 µm.

Silicon wavelength-selective partial-drop broadcast filter bank.

We propose an approach to a wavelength-selective 1×N port optical broadcast network demonstrating the approach in a 1×8 port parallel optical drop filter bank utilizing adiabatic micro-ring tunable filters. The micro-ring filters exhibit first-order 92.7±3.7 GHz full width at half-maximum bandwidths with a 36.2 nm free spectral range, low-drop power variation (0.11 dB), and aggregate excess loss of only 1.1 dB in all drop ports. Error-free operation at a 10 Gbit/s data rate is achieved for all eight drop ports with less than a 0.5 dB power penalty among the ports. This wavelength-selective parallel-drop approach serves as a building block for on-chip all-to-all communication networks.

Method for characterization of Si waveguide propagation loss.

A new method for measuring waveguide propagation loss in silicon nanowires is presented. This method, based on the interplay between traveling ring modes and standing wave modes due to back-scattering from edge roughness, is accurate and can be used for on wafer measurement of test structures. Examples of loss measurements and fitting are reported.

Graphene-assisted critically-coupled optical ring modulator.

Graphene's conductivity at optical frequencies can be varied upon injection of carriers. In the present paper, this effect is used to modulate losses of an optical wave traveling inside a ring cavity. This way an optical modulator based on the critical-coupling concept first introduced by Yariv can be realized. Through numerical simulations, we show that a modulator featuring a bandwidth as large as 100 GHz can be designed with switching energy in the order of few fJ per bit. Also, we show that operations with driving voltages below 1.2 volt could be obtained, thus making the proposed modulator compatible with requirements of low-voltage CMOS technology.