RESUMO
We study the effects of annealing on (Ga0.64,In0.36) (N0.045,As0.955) using hard X-ray photoelectron spectroscopy and X-ray absorption fine structure measurements. We observed surface oxidation and termination of the N-As bond defects caused by the annealing process. Specifically, we observed a characteristic chemical shift towards lower binding energies in the photoelectron spectra related to In. This phenomenon appears to be caused by the atomic arrangement, which produces increased In-N bond configurations within the matrix, as indicated by the X-ray absorption fine structure measurements. The reduction in the binding energies of group-III In, which occurs concomitantly with the atomic rearrangements of the matrix, causes the differences in the electronic properties of the system before and after annealing.
RESUMO
We theoretically investigate electron transport in a one-dimensional conductor with a locally disordered potential by using the non-equilibrium Green's function theory. It is found that, by changing the energy of a site in a one-dimensional atomic chain, the electron conductivity can be larger when the modulated site energy is smaller than that of the other sites. This contradicts the conventional picture that an electron is scattered by the disorder of the potential, because such a scattering process usually causes resistivity. We show that the enhancement of conductivity that seems contradictory to the conventional picture of electron motion is explained by the change of energy of quasi bound states in the conductor.
