RESUMO
Raman scattering is used to study the effect of low energy (90 eV) Ar(+) ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm(-1)) with ion fluence is determined for mono-, bi-, tri- and â¼50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar(+) ions in AB Bernal stacked graphite, and how they affect the graphene sheets. The results clearly depend on the number of layers. We also analyze the evolution of the overall integrated Raman intensity and the integrated intensity for disorder-induced versus Raman-allowed peaks.
Assuntos
Grafite/química , Grafite/efeitos da radiação , Modelos Químicos , Nanoestruturas/química , Nanoestruturas/efeitos da radiação , Análise Espectral Raman/métodos , Simulação por Computador , Íons Pesados , Substâncias Macromoleculares/química , Substâncias Macromoleculares/efeitos da radiação , Teste de Materiais , Conformação Molecular/efeitos da radiação , Nanoestruturas/ultraestrutura , Tamanho da Partícula , Doses de Radiação , Propriedades de Superfície/efeitos da radiaçãoRESUMO
The optical response of single-walled carbon nanotubes is dominated by exciton states with unusually large binding energies. We show that screening in semiconducting tubes enhances rather than reduces the electron-hole interaction for separations larger than the tube diameter. This "antiscreening" region deepens the relative energy level of the higher exciton states yielding unconventional excitation spectra. The effect explains the discrepancy in the current experimentally extrapolated exciton binding energies (deduced using conventional model spectra) and those obtained from ab initio calculations on isolated tubes.
