Extremely high frequency Schottky diodes based on single GaN nanowires.

Gallium nitride (GaN) is one of the most promising materials for high-frequency devices owing to its prominent material properties. We report on the fabrication and study of a series of Schottky diodes in the ground-signal-ground topology based on individual GaN nanowires. The electrical characterization ofI-Vcurves demonstrated relatively high ideality factor value (about 6-9) in comparison to the planar Au/GaN diodes that can be attributed to the nanowire geometry. The effective barrier height in the studied structures was defined in the range of 0.25-0.4 eV. The small-signal frequency analysis was employed to study the dependency of the scattering parameters in the broad range from 0.1 to 40 GHz. The approximation fitting of the experimental data indicated the record high cutoff frequency of about 165.8 GHz.

Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption.

Wurtzite GaP nanowires are interesting for the direct bandgap engineering and can be used as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have previously been obtained with Au catalysts. Here, we show that long (∼500 nm) wurtzite sections are formed in the top parts of self-catalyzed GaP nanowires grown by molecular beam epitaxy on Si(111) substrates in the droplet consumption stage, which is achieved by abruptly increasing the atomic V/III flux ratio from 2 to 3. We investigate the temperature dependence of the length of wurtzite sections and show that the longest sections are obtained at 610 °C. A supporting model explains the observed trends using a phase diagram of GaP nanowires, where the wurtzite phase is formed within a certain range of the droplet contact angles. The optimal growth temperature for growing wurtzite nanowires corresponds to the largest diffusion length of Ga adatoms, which helps to maintain the required contact angle for the longest time.

Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices.

Flexible optoelectronic structures are required in a wide range of applications. Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were studied. A homogeneous silicone encapsulation was enabled by G-coating using a heavy-load centrifuge. The synthesized graft-copolymers of polydimethylsiloxane (PDMS) and polystyrene demonstrated two times lower adhesion to Si compared to standard PDMS, allowing 3 square inch area high quality silicone/nanowire membrane mechanical release, preserving the growth Si substrate for a further re-use after chemical cleaning. The 90% transparent single-walled carbon nanotubes electrical contacts to the embedded n-GaP nanowires demonstrated mechanical and electrical stability. The presented methods can be used for the fabrication of large scale flexible inorganic optoelectronic devices.

Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface.

The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.

Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si.

The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN NWs growth on the bare Si (111) substrate, silicon nitride interlayer, predeposited AlN and GaO x buffer layers, monolayer thick Ga wetting layer and GaN seeding layer prepared by the droplet epitaxy is performed. It is demonstrated that the homogeneity and the morphology of the NW arrays drastically depend on the chosen buffer layer and surface preparation technique. An effect of the buffer and seeding layers on the nucleation and desorption is also discussed. The lowest NWs surface density of 14 µm-2 is obtained on AlN buffer layer and the highest density exceeding the latter value by more than an order of magnitude corresponds to the growth on the 0.3 ML thick Ga wetting layer. It is shown, that the highest NWs mean elongation rate is obtained with AlN buffer layer, while the lowest elongation rate corresponds to the bare Si (111) surface and it is twice as lower as the first case. It is found, that use of AlN buffer layer corresponds to the most homogeneous NWs array with the smallest length dispersion while the least homogeneous array corresponds to the bare Si substrate. Vertically aligned GaN NWs array on the wide bandgap GaO x semiconductor buffer layer grown by plasma-enhanced chemical vapor deposition demonstrates its potential for electronic applications. Photoluminescence (PL) study of the synthesized samples is characterized by an intense optical response related to the excitons bound to neutral donors. The highest PL intensity is obtained in the sample with AlN buffer layer.

InAs/AlGaAs quantum dots for single-photon emission in a red spectral range.

We report on comparative optical studies of InAs/Al0.44Ga0.56As quantum dots (QDs) grown by molecular beam epitaxy either with or without a thin GaAs interlayer inserted between the AlGaAs barrier and InAs QDs. Emission properties of individual QDs are investigated by micro-photoluminescence spectroscopy using 500-nm-size etched cylindric mesa structures. The single-photon statistics of the QDs of both types, emitting in the red spectral range between 636 and 750 nm, is confirmed by the measurements of the second-order correlation function. A negligibly small exciton fine structure splitting is detected in the majority of the QDs grown with the GaAs interlayer that implies the possibility of generating pairs of entangled photons with high entanglement fidelity.

Nanoscale Generation of White Light for Ultrabroadband Nanospectroscopy.

Achieving efficient localization of white light at the nanoscale is a major challenge due to the diffraction limit, and nanoscale emitters generating light with a broadband spectrum require complicated engineering. Here we suggest a simple, yet highly efficient, nanoscale white-light source based on a hybrid Si/Au nanoparticle with ultrabroadband (1.3-3.4 eV) spectral characteristics. We incorporate this novel source into a scanning-probe microscope and observe broadband spectrum of photoluminescence that allows fast mapping of local optical response of advanced nanophotonic structures with submicron resolution, thus realizing ultrabroadband near-field nanospectroscopy.

Self-adjusted all-dielectric metasurfaces for deep ultraviolet femtosecond pulse generation.

The advantage of metasurfaces and nanostructures with a high nonlinear response is that they do not require phase matching, and the generated pulses are short in the time domain without additional pulse compression. However, the fabrication of large-scale planar structures by lithography-based methods is expensive, time consuming, and requires complicated preliminary simulations to obtain the most optimized geometry. Here, we propose a novel strategy for the self-assembled fabrication of large-scale resonant metasurfaces, where incident femtosecond laser pulses adjust the initial silicon films via specific surface deformation to be as resonant as possible for a given wavelength. The self-adjusting approach eliminates the necessity of multistep lithography and designing, because interference between the incident and the scattered parts of each laser pulse "imprints" resonant field distribution within the film. The self-adjusted metasurfaces demonstrate a high damage threshold (≈1012 W cm-2) and efficient frequency conversion from near-IR to deep UV. The conversion efficiency is up to 30-fold higher compared with nonresonant smooth Si films. The resulting metasurfaces allow for the generation of UV femtosecond laser pulses at a wavelength of 270 nm with a high peak and average power (≈105 W and ≈1.5 µW, respectively). The results pave the way to the creation of ultrathin nonlinear metadevices working at high laser intensities for efficient deep UV generation at the nanoscale.

Laser fabrication of crystalline silicon nanoresonators from an amorphous film for low-loss all-dielectric nanophotonics.

The concept of high refractive index subwavelength dielectric nanoresonators, supporting electric and magnetic optical resonance, is a promising platform for waveguiding, sensing, and nonlinear nanophotonic devices. However, high concentration of defects in the nanoresonators diminishes their resonant properties, which are crucially dependent on their internal losses. Therefore, it seems to be inevitable to use initially crystalline materials for fabrication of the nanoresonators. Here, we show that the fabrication of crystalline (low-loss) resonant silicon nanoparticles by femtosecond laser ablation of amorphous (high-loss) silicon thin films is possible. We apply two conceptually different approaches: recently proposed laser-induced transfer and a novel laser writing technique for large-scale fabrication of the crystalline nanoparticles. The crystallinity of the fabricated nanoparticles is proven by Raman spectroscopy and electron transmission microscopy, whereas optical resonant properties of the nanoparticles are studied using dark-field optical spectroscopy and full-wave electromagnetic simulations.

Mode selection in InAs quantum dot microdisk lasers using focused ion beam technique.

Optically pumped InAs quantum dot microdisk lasers with grooves etched on their surface by a focused ion beam are studied. It is shown that the radial grooves, depending on their length, suppress the lasing of specific radial modes of the microdisk. Total suppression of all radial modes, except for the fundamental radial one, is also demonstrated. The comparison of laser spectra measured at 78 K before and after ion beam etching for a microdisk of 8 µm in diameter shows a sixfold increase of mode spacing, from 2.5 to 15.5 nm, without a significant decrease of the dominant mode quality factor. Numerical simulations are in good agreement with experimental results.

Framed carbon nanostructures: synthesis and applications in functional SPM tips.

We present a synthesis method to fabricate framed carbon-based nanostructures having highly anisotropic shapes, in particular, the nanofork and nanoscalpel structures which are obtained systematically under optimized growth conditions. A theoretical model is developed to explain the formation of such nanostructures on Si cantilevers and W etched wires exposed to a focused electron beam. We then demonstrate the potentials of these nanostructures as functional tips for scanning probe microscopy. Owing to their anisotropic shapes, such tips can be very useful for nanolithography, nanosurgery of biological objects, and precise manipulation with surface particles. Overall, our method provides a simple and robust way to produce functional scanning probe microscopy tips with variable shapes and enhanced capabilities for different applications compared to standard cantilevers.

Control of emission spectra in quantum dot microdisk/microring lasers.

Focused ion beam is applied to quantum dot based microresonators to form pits or groove on their surface. The emission spectra of the resonators based lasers are significantly thinned out after the ion beam milling, and one or two modes become dominant instead of a group of modes having comparable intensities. The linewidth of the lasing mode is kept unchanged, whereas the lasing threshold demonstrates an insignificant growth.

[Structure of cytosolic membrane and chemical composition of red blood cells during the early period of wound damage according to scanning probe microscopy].

With the help of scanning electronic and atomic force microscopy structure of red blood cell membranes of the system blood-groove and microcirculatory channels is studied. It is established, that in early stages of skin wounds in a peripheral blood circulation appear compressed red blood cells, losing water. As a result the basic mechanism of destruction of red blood cell membranes are interlayered shifts and stratification. In red blood cells of microvasculature, on the contrary, red blood cells in state of vacuolar degeneration are indentified. It creates preconditions for hydration and bullous deformations of membranes. Porous structures of membranes of both types erythrocytes are exposed to expansion.