Super-Resolution Fluorescence Imaging for Semiconductor Nanoscale Metrology and Inspection.

The increase in the number and complexity of process levels in semiconductor production has driven the need for the development of new measurement methods that can evaluate semiconductor devices at the critical dimensions of fine patterns and simultaneously inspect nanoscale contaminants or defects. However, conventional optical inspection methods often fail to resolve device patterns or defects at the level of tens of nanometers required for device development owing to their diffraction-limited resolutions. In this study, we used the stochastic optical reconstruction microscopy (STORM) technique to image semiconductor nanostructures with feature sizes as small as 30 nm and detect individual 20 nm-diameter contaminants. STORM imaging of semiconductor nanopatterns is based on the development of a selective labeling method of fluorophores for a negative silicon oxide surface using the charge interaction of positive polyethylenimine molecules. This study demonstrates the potential of STORM for nanoscale metrology and in-line defect inspection of semiconductor integrated circuits.

Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.

A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.