RESUMO
Precession of magnetization induced by pulsed optical excitation is observed in a ferromagnetic semiconductor (Ga,Mn)As by time-resolved magneto-optical measurements. It appears as complicated oscillations of a polarization plane of linearly polarized probe pulses, but is reproduced by gyromagnetic theory incorporating an impulsive change in an effective magnetic field due to a change in the magnetic anisotropy. The shape of the impulse suggests a significant nonthermal contribution of photogenerated carriers to the change in anisotropy through spin-orbit interaction.
RESUMO
Time-resolved magneto-optical Kerr spectroscopy of ferromagnetic InMnAs reveals two distinct demagnetization processes--fast (<1 ps) and slow (approximately 100 ps). Both components diminish with increasing temperature and are absent above the Curie temperature. The fast component rapidly grows with pump power and saturates at high fluences (>10 mJ/cm(2)); the saturation value indicates a complete quenching of ferromagnetism on a subpicosecond time scale. We attribute this fast dynamics to spin heating through p-d exchange interaction between photocarriers and Mn ions, while the approximately 100 ps component is interpreted as spin-lattice relaxation.
RESUMO
We report on the new type of photoinduced magnetization in ferromagnetic (Ga,Mn)As thin films. Optically generated spin-polarized holes change the orientation of ferromagnetically coupled Mn spins and cause a large change in magnetization, being 15% of the saturation magnetization, without the application of a magnetic field. The memorization effect has also been found as a trace after the photoinduced magnetization. The observed results suggest that a small amount of nonequilibrium carrier spins can cause collective rotation of Mn spins presumably through the p-d exchange interaction.
RESUMO
The x-ray absorption fine structure (XAFS) technique has been employed to investigate the local structure and valency about Mn and Fe ions in the III-V diluted magnetic semiconductors In(1-x)Mn(x)As and Ga(1-x)Fe(x)As, prepared by molecular-beam-epitaxy under various growth conditions. These new systems are promising magnetic materials of considerable current interest and with important technical applications including photo-carrier induced magnetism and spin-polarized current devices. The local structure around the magnetic ions can play a pivotal role in affecting the magnetic properties of these semiconductors. Local structure information obtained from XAFS has provided the first direct evidence that the magnetic impurities can indeed substitute for the cation host atoms in samples prepared under appropriate conditions.