Hierarchy of Lifshitz Transitions in the Surface Electronic Structure of Sr_{2}RuO_{4} under Uniaxial Compression.

We report the evolution of the electronic structure at the surface of the layered perovskite Sr_{2}RuO_{4} under large in-plane uniaxial compression, leading to anisotropic B_{1g} strains of ϵ_{xx}-ϵ_{yy}=-0.9±0.1%. From angle-resolved photoemission, we show how this drives a sequence of Lifshitz transitions, reshaping the low-energy electronic structure and the rich spectrum of van Hove singularities that the surface layer of Sr_{2}RuO_{4} hosts. From comparison to tight-binding modeling, we find that the strain is accommodated predominantly by bond-length changes rather than modifications of octahedral tilt and rotation angles. Our study sheds new light on the nature of structural distortions at oxide surfaces, and how targeted control of these can be used to tune density of state singularities to the Fermi level, in turn paving the way to the possible realization of rich collective states at the Sr_{2}RuO_{4} surface.

Mode Crystallography Analysis through the Structural Phase Transition and Magnetic Critical Behavior of the Lacunar Spinel GaMo4Se8.

In the lacunar spinels, with the formula AB4X8, transition-metal ions form tightly bound B4 clusters resulting in exotic physical properties such as the stabilization of Néel-type skyrmion lattices, which hold great promise for energy-efficient switching devices. These properties are governed by the symmetry of these compounds with distortion of the parent noncentrosymmetric F4̅3m space group to the polar R3m, with recent observation of a coexisting Imm2 low-temperature phase. In this study, through powder neutron diffraction, we further confirm that a metastable Imm2 coexists with the R3m phase in GaMo4Se8 and we present its structure. By applying the mode crystallography approach to the distortions together with anisotropic microstrain broadening analysis, we postulate that the formation origin of the minority Imm2 phase stems from the high compressive stress observed in the R3m phase. Bond valence sum analysis also suggests a change in electronic configuration in the transition to Imm2 which could have implications on the electrical properties of the compound. We further establish the nature of the magnetic phase transition using critical exponent analysis obtained from single-crystal magnetization measurements which shows a mixture of tricritical mean-field and 3D Heisenberg behavior [ß = 0.22(4), γ = 1.19(1), and δ = 6.42(1)]. Magnetoentropic mapping performed on a single crystal reveals the signature of a positive entropy region near the magnetic phase transition which corresponds to the skyrmion phase field observed in a polycrystalline sample.

Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors.

The electronic and optical properties of (InxGa1-x)2O3 alloys are highly tunable, giving rise to a myriad of applications including transparent conductors, transparent electronics, and solar-blind ultraviolet photodetectors. Here, we investigate these properties for a high quality pulsed laser deposited film which possesses a lateral cation composition gradient (0.01 ≤ x ≤ 0.82) and three crystallographic phases (monoclinic, hexagonal, and bixbyite). The optical gaps over this composition range are determined, and only a weak optical gap bowing is found (b = 0.36 eV). The valence band edge evolution along with the change in the fundamental band gap over the composition gradient enables the surface space-charge properties to be probed. This is an important property when considering metal contact formation and heterojunctions for devices. A transition from surface electron accumulation to depletion occurs at x ∼ 0.35 as the film goes from the bixbyite In2O3 phase to the monoclinic ß-Ga2O3 phase. The electronic structure of the different phases is investigated by using density functional theory calculations and compared to the valence band X-ray photoemission spectra. Finally, the properties of these alloys, such as the n-type dopability of In2O3 and use of Ga2O3 as a solar-blind UV detector, are understood with respect to other common-cation compound semiconductors in terms of simple chemical trends of the band edge positions and the hydrostatic volume deformation potential.

GeSe: Optical Spectroscopy and Theoretical Study of a van der Waals Solar Absorber.

The van der Waals material GeSe is a potential solar absorber, but its optoelectronic properties are not yet fully understood. Here, through a combined theoretical and experimental approach, the optoelectronic and structural properties of GeSe are determined. A fundamental absorption onset of 1.30 eV is found at room temperature, close to the optimum value according to the Shockley-Queisser detailed balance limit, in contrast to previous reports of an indirect fundamental transition of 1.10 eV. The measured absorption spectra and first-principles joint density of states are mutually consistent, both exhibiting an additional distinct onset ∼0.3 eV above the fundamental absorption edge. The band gap values obtained from first-principles calculations converge, as the level of theory and corresponding computational cost increases, to 1.33 eV from the quasiparticle self-consistent GW method, including the solution to the Bethe-Salpeter equation. This agrees with the 0 K value determined from temperature-dependent optical absorption measurements. Relaxed structures based on hybrid functionals reveal a direct fundamental transition in contrast to previous reports. The optoelectronic properties of GeSe are resolved with the system described as a direct semiconductor with a 1.30 eV room temperature band gap. The high level of agreement between experiment and theory encourages the application of this computational methodology to other van der Waals materials.

Modular Design via Multiple Anion Chemistry of the High Mobility van der Waals Semiconductor Bi4O4SeCl2.

Making new van der Waals materials with electronic or magnetic functionality is a chemical design challenge for the development of two-dimensional nanoelectronic and energy conversion devices. We present the synthesis and properties of the van der Waals material Bi4O4SeCl2, which is a 1:1 superlattice of the structural units present in the van der Waals insulator BiOCl and the three-dimensionally connected semiconductor Bi2O2Se. The presence of three anions gives the new structure both the bridging selenide anion sites that connect pairs of Bi2O2 layers in Bi2O2Se and the terminal chloride sites that produce the van der Waals gap in BiOCl. This retains the electronic properties of Bi2O2Se while reducing the dimensionality of the bonding network connecting the Bi2O2Se units to allow exfoliation of Bi4O4SeCl2 to 1.4 nm height. The superlattice structure is stabilized by the configurational entropy of anion disorder across the terminal and bridging sites. The reduction in connective dimensionality with retention of electronic functionality stems from the expanded anion compositional diversity.

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics.

The earth-abundant semiconductor Cu3BiS3 (CBS) exhibits promising photovoltaic properties and is often considered analogous to the solar absorbers copper indium gallium diselenide (CIGS) and copper zinc tin sulfide (CZTS) despite few device reports. The extent to which this is justifiable is explored via a thorough X-ray photoemission spectroscopy (XPS) analysis: spanning core levels, ionization potential, work function, surface contamination, cleaning, band alignment, and valence-band density of states. The XPS analysis overcomes and addresses the shortcomings of prior XPS studies of this material. Temperature-dependent absorption spectra determine a 1.2 eV direct band gap at room temperature; the widely reported 1.4-1.5 eV band gap is attributed to weak transitions from the low density of states of the topmost valence band previously being undetected. Density functional theory HSE06 + SOC calculations determine the band structure, optical transitions, and well-fitted absorption and Raman spectra. Valence band XPS spectra and model calculations find the CBS bonding to be superficially similar to CIGS and CZTS, but the Bi3+ cations (and formally occupied Bi 6s orbital) have fundamental impacts: giving a low ionization potential (4.98 eV), suggesting that the CdS window layer favored for CIGS and CZTS gives detrimental band alignment and should be rejected in favor of a better aligned material in order for CBS devices to progress.