RESUMO
The oxygen partial pressure during NiO deposition in reactive sputtering of a Ni target is used to control its carrier type and concentration, obtaining both n- and p-type films. Carrier concentration can be controlled, ranging from 1019 to 1014 cm-3. Films deposition is performed at 200 °C, a relatively low temperature that enables the use of glass as substrate. Experimental band diagrams for n-type NiO are obtained for the first time. Finally, a NiO homojunction is demonstrated by introducing a low carrier concentration layer in between n- and p+-type NiO layers. Layers are deposited in situ, preventing contamination and improving the interface quality, as observed by TEM. The Ni:O ratio for each layer was also obtained by analytical TEM measurements, demonstrating the impact of the oxygen partial pressure on the films' stoichiometry and the simplicity of our process to control carrier type and carrier concentration in oxide semiconductors.
RESUMO
One of the major limitations of oxide semiconductors technology is the lack of proper p-type materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors. This limitation has resulted in an increased research focus on these materials. In this work, p-type NiO x thin films with tunable optical and electrical properties as well as its dependence with oxygen pressure during pulsed laser deposition are demonstrated. The control of NiO x films resistivity ranged from â¼109 to â¼102 Ω cm, showing a p-type behavior with Eg tuning from 3.4 to 3.9 eV. Chemical composition and the resulting band diagrams are also discussed. The all-oxide NiO x-Ga2O3 pn junction showed very low leakage current, an ideality factor of â¼2, 105 on/off ratio, and 0.6 V built-in potential. Its J- V temperature dependence is also analyzed. C- V measurements demonstrate diodes with a carrier concentration of 1015 cm-3 for the Ga2O3 layer, which is fully depleted. These results show a stable, promising diode, attractive for future photoelectronic devices.
