RESUMO
We have used focused ion beam irradiation to progressively cause defects in annealed molybdenum silicide thin films. Without the treatment, the films are superconducting with critical temperature of about 1 K. We observe that both resistivity and critical temperature increase as the ion dose is increased. For resistivity, the increase is almost linear, whereas critical temperature changes abruptly at the smallest doses and then remains almost constant at 4 K. We believe that our results originate from amorphization of the polycrystalline molybdenum silicide films.
RESUMO
Electrothermal elements are used in various energy harvesters, coolers, and radiation detectors. The optimal operation of these elements relies on mastering two competing boundary conditions: the maximization of the electrothermal response and the blockade of lattice (phonon) thermal conduction. In this work, we propose and demonstrate that efficient electrothermal operation and phonon blocking can be achieved in solid-state thermionic junctions, paving the way for new phonon-engineered high-efficiency refrigerators and sensors. Our experimental demonstration uses semiconductor-superconductor (Sm-S) junctions where the electrothermal response arises from the superconducting energy gap and the phonon blocking results from the acoustic transmission bottleneck at the junction. We demonstrate a cooling platform where a silicon chip, suspended only from the Sm-S junctions, is cooled by ~40% from the bath temperature. We also show how the observed effect can be used in radiation detectors and multistage electronic refrigerators suitable for cooling of quantum technology devices.
