Reconfigurable VO2 metasurfaces with hybrid electro-optical control: manipulating THz radiation with 0.3 W/cm2 light.

Dynamicallyprogrammable metasurfaces capable of manipulating terahertz (THz) wavefronts in various manners depending on external controls are highly desired for next-generation wireless communication systems and new tools for THz diagnostics. Such metasurfaces may utilize the insulator-to-metal transition in V O 2, which can be induced both electrically and optically. Optical control is especially convenient for individual addressing to each meta-atom, but it is hampered by the high optical switching threshold of V O 2. We experimentally realize V O 2-based THz metasurfaces with hybrid electro-optical control when the metasurface is brought close to the transition point by an almost-threshold current, and then is easily switched by unfocused continuous-wave light. We were able to control the metasurface THz transmission by 0.4W/c m 2 near-IR light, while purely optical switching required tightly focused light with an intensity of >3×105 W/c m 2. After correcting for the fact that a tightly focused spot dissipates heat easier, we estimate that the optical switching threshold reduction due to the electric current alone is ∼2 orders of magnitude. Finally, coating the metasurface with Au nanoparticles further reduced the threshold by 30% due to plasmonic effects.

Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts.

Structural or crystal asymmetry is a necessary condition for the emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via p-n doping, which is a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in two-dimensional (2D) material flakes exploiting the geometrical nonequivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe2 with mutually orthogonal metal leads. Upon uniform illumination with linearly polarized light, the device demonstrates nonzero photocurrent which flips its sign upon 90° polarization rotation. The origin of zero-bias photocurrent lies in a polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair and selectively activates the internal photoeffect at the respective metal-PdSe2 Schottky junction. The proposed technology of contact engineering is independent of a particular light-detection mechanism and can be extended to arbitrary 2D materials.

Ultralow-noise Terahertz Detection by p-n Junctions in Gapped Bilayer Graphene.

Graphene shows strong promise for the detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's physical properties on the detected radiation can be traced down to the absence of a band gap. Here, we study the effect of electrically induced band gap on THz detection in graphene bilayer with split-gate p-n junction. We show that gap induction leads to a simultaneous increase in current and voltage responsivities. At operating temperatures of ∼25 K, the responsivity at a 20 meV band gap is from 3 to 20 times larger than that in the gapless state. The maximum voltage responsivity of our devices at 0.13 THz illumination exceeds 50 kV/W, while the noise equivalent power falls down to 36 fW/Hz1/2.

Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions.

Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials having been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient, and photoresistivity at cryogenic temperatures T ∼ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel doping even at small band gaps of ∼10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intraband thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.