Near-UV light emitting diode with on-chip photocatalysts for purification applications.

A new design for light-emitting diodes (LEDs) with on-chip photocatalysts is presented for purification applications. An array of disk-shaped TiO2, with a diameter of several hundred nanometers, combined with SiO2 pedestals was fabricated directly on the surface of an InGaN-based near-ultraviolet (UV) LED using a dry etching process. The high refractive-index contrast at the boundary and the circular shape can effectively confine the near-UV light generated from the LED through multiple internal reflections inside the TiO2 nanodisks. Such a feature results in the enhancement of light absorption by the photocatalytic TiO2. The degradation of the organic dye malachite green was monitored as a model photocatalytic reaction. The proposed structure of LEDs with TiO2/SiO2 nanodisk/pedestal array exhibited a photocatalytic activity that was three times higher than the activity of LEDs with a TiO2 planar layer. The integration of photocatalytic materials with near-UV LEDs in a single system is promising for various purification applications, such as sterilization and disinfection.

Enhanced optical output in InGaN/GaN light-emitting diodes by tailored refractive index of nanoporous GaN.

The light to be trapped inside light-emitting diodes (LEDs) greatly affects the luminous efficiency and device lifetime. Abrupt difference in refractive index between the sapphire substrate and GaN-based LEDs causes light trapping by total internal reflection, however, its optical loss has been taken for granted. In this study, we demonstrate that nanoporous GaN can be used as a refractive-index-matching layer to enhance the light transmittance at the sapphire-GaN interface in InGaN/GaN flip-chip light-emitting diodes (FCLEDs). The porosity and the refractive index of the nanoporous GaN layer are controlled by electrochemical etching of n-type GaN layer. The optical output power of FCLEDs with the nanoporous GaN layer grown on flat and patterned sapphire substrates is increased by 355% and 65% at an injection current of 20 mA, respectively, compared with that of an FCLED without the nanoporous GaN layer. The remarkable enhancement of optical output is mostly attributed to the nanoporous GaN layer which drastically increases the light extraction efficiency by decreasing the reflection of light at the sapphire-GaN interface.

Blending of n-type Semiconducting Polymer and PC61BM for an Efficient Electron-Selective Material to Boost the Performance of the Planar Perovskite Solar Cell.

The highly efficient CH3NH3PbI3 perovskite solar cell (PeSC) is simply achieved by employing a blended electron-transport layer (ETL) consisting of PC61BM and P(NDI2OD-T2). The high molecular weight of P(NDI2OD-T2) allows for a thinned ETL with a uniform morphology that optimizes the PC61BM ETL more effectively. As a result of this enhancement, the power conversion efficiency of a PC61BM:P(NDI2OD-T2)-based PeSC is 25% greater than that of the conventional PC61BM based-PeSC; additionally, the incorporation of P(NDI2OD-T2) into PC61BM attenuates the dependence of the PeSC on the ETL-processing conditions regarding its performance. It is revealed that, in addition to the desirable n-type semiconducting characteristics of PC61BM:P(NDI2OD-T2)-including a higher electron-mobility and a more-effective electron selectivity of a blended ETL for an efficient electron extraction-the superior performance of a PC61BM:P(NDI2OD-T2) device is the result of a thinned and uniformly covered ETL on the perovskite layer.

Light-Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect.

Bioinspired hierarchical structures on the surface of vertical light-emitting diodes (VLEDs) are demonstrated by combining a self-assembled dip-coating process and nanopatterning transfer method using thermal release tape. This versatile surface structure can efficiently reduce the total internal reflection and add functions, such as superhydrophobicity and high oleophobicity, to achieve an antifouling effect for VLEDs.

Mid-IR spectroscopy of Fe:ZnSe quantum dots.

We report spectroscopic characterization of Fe:ZnSe quantum dots (for 2% of Zn/Fe molar ratio) fabricated by microemulsion hydrothermal synthesis. Mid-IR photoluminescence of the 5E↔5T2 transition of Fe2+ ions over 3.5-4.5 µm spectral range was observed in Fe:ZnSe quantum dot samples and kinetics of luminescence have been characterized at temperatures of 30-300 K under direct (2.788 µm) mid-IR excitation and indirect (0.355 µm) photoionization excitation. The radiative lifetime (τrad) was estimated from these measurements to be 48 µs while lifetime at room temperature was measured to be 440 ns. This agrees closely with the behavior of bulk material.

Highly Efficient, Color-Reproducible Full-Color Electroluminescent Devices Based on Red/Green/Blue Quantum Dot-Mixed Multilayer.

Over the past few years the performance of colloidal quantum dot-light-emitting diode (QLED) has been progressively improved. However, most of QLED work has been fulfilled in the form of monochromatic device, while full-color-enabling white QLED still remains nearly unexplored. Using red, green, and blue quantum dots (QDs), herein, we fabricate bichromatic and trichromatic QLEDs through sequential solution-processed deposition of poly(9-vinlycarbazole) (PVK) hole transport layer, two or three types of QDs-mixed multilayer, and ZnO nanoparticle electron transport layer. The relative electroluminescent (EL) spectral ratios of constituent QDs in the above multicolored devices are found to inevitably vary with applied bias, leading to the common observation of an increasing contribution of a higher-band gap QD EL over low-band gap one at a higher voltage. The white EL from a trichromatic device is resolved into its primary colors through combining with color filters, producing an exceptional color gamut of 126% relative to National Television Systems Committee (NTSC) color space that a state-of-the-art full-color organic LED counterpart cannot attain. Our trichromatic white QLED also displays the record-high EL performance such as the peak values of 23,352 cd/m(2) in luminance, 21.8 cd/A in current efficiency, and 10.9% in external quantum efficiency.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

Origin of White Electroluminescence in Graphene Quantum Dots Embedded Host/Guest Polymer Light Emitting Diodes.

Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

Multicolored organic/inorganic hybrid perovskite light-emitting diodes.

Bright organic/inorganic hybrid perov-skite light-emitting diodes (PrLEDs) are realized by using CH3 NH3 PbBr3 as an emitting layer and self-organized buffer hole-injection layer (Buf-HIL). The PrLEDs show high luminance, current efficiency, and EQE of 417 cd m(-2) , 0.577 cd A(-1) , and 0.125%, respectively. Buf-HIL can facilitate hole injection into CH3 NH3 PbBr3 as well as block exciton quenching.

Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes.

Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

Palladium-decorated hydrogen-gas sensors using periodically aligned graphene nanoribbons.

Polymer residue-free graphene nanoribbons (GNRs) of 200 nm width at 1 µm pitch were periodically generated in an area of 1 cm(2) via laser interference lithography using a chromium interlayer prior to photoresist coating. High-quality GNRs were evidenced by atomic force microscopy, micro-Raman spectroscopy, and X-ray photoelectron spectroscopy measurements. Palladium nanoparticles were then deposited on the GNRs as catalysts for sensing hydrogen gases, and the GNR array was utilized as an electrically conductive path with less electrical noise. The palladium-decorated GNR array exhibited a rectangular sensing curve with unprecedented rapid response and recovery properties: 90% response within 60 s at 1000 ppm and 80% recovery within 90 s in nitrogen ambient. In addition, reliable and repeatable sensing behaviors were revealed when the array was exposed to various gas concentrations even at 30 ppm.

Energy scaling of 4.3 µm room temperature Fe:ZnSe laser.

We demonstrate a fourfold increase of the output energy of the gain-switched mid-IR Fe:ZnSe laser. Iron doping of the ZnSe polycrystalline samples was realized using a postgrowth thermal-diffusion method from the metal film. Gain-switched Er:Cr:YSGG (2.8 µm) laser pumped Fe:ZnSe lasing was studied in a Fabry-Perot cavity over a 236-300 K temperature range. The maximum output energy reached 4.7 mJ at 4.3 µm and 3.6 mJ at 4.37 µm at 236 K and 300 K and was limited only by available pump energy. The laser threshold was about 8 mJ and was practically unchanged over the studied temperature range. The laser slope efficiencies, measured with respect to the input pump energy, decreased from 19% to 16% with an increase of temperature from 236 to 300 K. The output radiation featured a Gaussian spatial profile with M(2) = 2.6.