1.
J Nanosci Nanotechnol
; 13(8): 5513-6, 2013 Aug.
Artigo
em Inglês
| MEDLINE
| ID: mdl-23882787
RESUMO
Real-time pulse measurements of nano-scale field effect transistors (FETs) are reported. We demonstrate the direct monitoring of the real-time current of bottom-up assembled silicon nanowire FET and top-down fabricated gate-all-around silicon nanowire FET, both with the diameter of approximately 50 nm. We demonstrate that the displacement current can be cancelled out from the measured pulse responses. On the other hand, the displacement current also can be utilized to obtain the coupling capacitance between the gate and source of the FETs.