Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance.

Chalcogenide compounds are the main characters in a revolution in electronic memories. These materials are used to produce ultrafast ovonic threshold switches (OTSs) with good selectivity and moderate leakage current and phase-change memories (PCMs) with excellent endurance and short read/write times when compared with state-of-the-art flash-NANDs. The combination of these two electrical elements is used to fabricate nonvolatile memory arrays with a write/access time orders of magnitude shorter than that of state-of-the-art flash-NANDs. These devices have a pivotal role for the advancement of fields such as artificial intelligence, machine learning, and big-data. Chalcogenide films, at the moment, are deposited by using physical vapor deposition (PVD) techniques that allow for fine control over the stoichiometry of solid solutions but fail in providing the conformality required for developing large-memory-capacity integrated 3D structures. Here we present conformal ALD chalcogenide films with control over the composition of germanium, antimony, and tellurium (GST). By developing a technique to grow elemental Te we demonstrate the ability to deposit conformal, smooth, composition-controlled GST films. We present a thorough physical and chemical characterization of the solids and an in-depth electrical test. We demonstrate the ability to produce both OTS and PCM materials. GeTe4 OTSs exhibit fast switching times of ∼13 ns. Ge2Sb2Te5 ALD PCMs exhibit a wide memory window exceeding two orders of magnitude, short write times (∼100 ns), and a reset current density as low as ∼107 A/cm2-performance matching or improving upon state-of-the-art PVD PCM devices.

Engineering of Ferroelectric HfO2-ZrO2 Nanolaminates.

In this work, the ferroelectric properties of nanolaminates made of HfO2 and ZrO2 were studied as a function of the deposition temperature and the individual HfO2/ZrO2 layer thickness before and after electrical field cycling. The ferroelectric response was found to depend on the structure of the nanolaminates before any postdeposition annealing treatment. After annealing with a TiN cap, an "antiferroelectric-like" response was obtained from nanolaminates deposited in an amorphous state at a lower temperature, whereas a ferroelectric response was obtained from nanolaminates deposited at a higher temperature, where crystallites were detected in thick films before annealing. As the individual layer thicknesses were decreased, an increased lattice distortion and a concurrent increase in remanent polarization were observed from the nanolaminates deposited at high temperatures. After field cycling, nanolaminates deposited at lower temperatures exhibited an antiferroelectric-like to ferroelectric transition, whereas those deposited at higher temperatures exhibited a larger remanent polarization. Finally, we demonstrate that by leveraging the proper choice of process conditions and layer thickness, remanent polarizations exceeding those of the HfZrO4 solid solution can be obtained.

Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon.

Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the doping level, doping type, crystallographic surface direction, and etchant solution composition. We used the doping dependence of the reaction to fabricate a novel etch stop for the reaction.

Hybrid Metal-Semiconductor Nanostructure for Ultrahigh Optical Absorption and Low Electrical Resistance at Optoelectronic Interfaces.

Engineered optoelectronic surfaces must control both the flow of light and the flow of electrons at an interface; however, nanostructures for photon and electron management have typically been studied and optimized separately. In this work, we unify these concepts in a new hybrid metal-semiconductor surface that offers both strong light absorption and high electrical conductivity. We use metal-assisted chemical etching to nanostructure the surface of a silicon wafer, creating an array of silicon nanopillars protruding through holes in a gold film. When coated with a silicon nitride anti-reflection layer, we observe broad-band absorption of up to 97% in this structure, which is remarkable considering that metal covers 60% of the top surface. We use optical simulations to show that Mie-like resonances in the nanopillars funnel light around the metal layer and into the substrate, rendering the metal nearly transparent to the incoming light. Our results show that, across a wide parameter space, hybrid metal-semiconductor surfaces with absorption above 90% and sheet resistance below 20 Ω/□ are realizable, suggesting a new paradigm wherein transparent electrodes and photon management textures are designed and fabricated together to create high-performance optoelectronic interfaces.

Performance enhancement of metal nanowire transparent conducting electrodes by mesoscale metal wires.

For transparent conducting electrodes in optoelectronic devices, electrical sheet resistance and optical transmittance are two of the main criteria. Recently, metal nanowires have been demonstrated to be a promising type of transparent conducting electrode because of low sheet resistance and high transmittance. Here we incorporate a mesoscale metal wire (1-5 µm in diameter) into metal nanowire transparent conducting electrodes and demonstrate at least a one order of magnitude reduction in sheet resistance at a given transmittance. We realize experimentally a hybrid of mesoscale and nanoscale metal nanowires with high performance, including a sheet resistance of 0.36 Ω sq(-1) and transmittance of 92%. In addition, the mesoscale metal wires are applied to a wide range of transparent conducting electrodes including conducting polymers and oxides with improvement up to several orders of magnitude. The metal mesowires can be synthesized by electrospinning methods and their general applicability opens up opportunities for many transparent conducting electrode applications.