RESUMO
Chemical vapour deposition (CVD) is one of the most promising methods to synthesize monolayers of 2D materials like transition metal dichalcogenides (TMDs) over a large area with high film quality. Among many parameters that determine the growth of 2D materials, flow of precursor near the surface is one of the most sensitive conditions. In this study, we show how subtle changes in the flow near the substrate surface can affect the quality and coverage of the MoS2 monolayer. We fine tune the flow of the carrier gas near the substrate under two extreme conditions to grow large area and clean monolayer. In the first study, we grew several centimetres long continuous monolayer under the condition, which generally produces monolayers of few tens of micrometres in size without tuning the flow on the substrate surface. In the second case, we got monolayer MoS2 under the conditions meant for the formation of bulk MoS2.We achieved this by placing blockades on the substrate surface which helped in modifying the flow near them. Through simulation, we showed how the flow is affected near these blockades and used it as a guiding rule to grow patterned continuous MoS2 monolayers. Detailed electrical and optical measurements were done to determine the quality of the as-grown samples. Our studies provide a way to obtain clean, large area monolayer of desired pattern by tuning the flow of precursor on the vicinity of the substrate surface even when the growth conditions in CVD are far from optimum.