In situ chamber for studying battery failure using high-speed synchrotron radiography.

The investigation of lithium-ion battery failures is a major challenge for personnel and equipment due to the associated hazards (thermal reaction, toxic gases and explosions). To perform such experiments safely, a battery abuse-test chamber has been developed and installed at the microtomography beamline ID19 of the European Synchrotron Radiation Facility (ESRF). The chamber provides the capability to robustly perform in situ abuse tests through the heat-resistant and gas-tight design for flexible battery geometries and configurations, including single-cell and multi-cell assemblies. High-speed X-ray imaging can be complemented by supplementary equipment, including additional probes (voltage, pressure and temperature) and thermal imaging. Together with the test chamber, a synchronization graphical user interface was developed, which allows an initial interpretation by time-synchronous visualization of the acquired data. Enabled by this setup, new meaningful insights can be gained into the internal processes of a thermal runaway of current and future energy-storage devices such as lithium-ion cells.

A Priori Information Based Time-Resolved 3D Analysis of the Trajectory and Spatial Orientation of Fast-Moving Objects Using High-Speed Flash X-ray Imaging.

This paper shows that the X-ray analysis method known from the medical field, using a priori information, can provide a lot more information than the common analysis for high-speed experiments. Via spatial registration of known 3D shapes with the help of 2D X-ray images, it is possible to derive the spatial position and orientation of the examined parts. The method was demonstrated on the example of the sabot discard of a subcaliber projectile. The velocity of the examined object amounts up to 1600 m/s. As a priori information, the geometry of the experimental setup and the shape of the projectile and sabot parts were used. The setup includes four different positions or points in time to examine the behavior over time. It was possible to place the parts within a spatial accuracy of 0.85 mm (standard deviation), respectively 1.7 mm for 95% of the errors within this range. The error is mainly influenced by the accuracy of the experimental setup and the tagging of the feature points on the X-ray images.

Correlation of optical properties and interface morphology in type-II semiconductor heterostructures.

(Ga,In)As/GaAs/Ga(As,Sb) and (Ga,In)As/GaAs/Ga(N,As) type-II double quantum well heterostructures have been grown by metal-organic vapor phase epitaxy. A growth interruption procedure was used to intentionally modify the morphology of the internal interfaces. The heterostructures were investigated using continuous wave and time-resolved photoluminescence as well as optical pump-optical probe spectroscopy. We find a correlation between the interface morphology and optical and kinetic properties. A growth interruption of about 120 s yielded substantially smoother interfaces both on vertical as well as lateral length scales. On the other hand a considerably enhanced type-II recombination time as well as a longer electron tunneling time are observed. We attribute this to a reduced interface localization in case of smoother interfaces.