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[This corrects the article DOI: 10.1021/acs.cgd.2c01318.].
RESUMO
Transition metal dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large monocrystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz glass ampoules by sulfuric vapor transport and liquid sulfur. Unlike the sublimation technique, the metal enters the gas phase in the form of molecules, hence containing a greater amount of sulfur than the growing crystal. We have investigated the physical properties for a selection of these crystals and compared them to state-of-the-art findings reported in the literature. The acquired electronic properties features demonstrate the overall high quality of single crystals grown in this work as exemplified by CoS2, ReS2, NbS2, and TaS2. This new approach to synthesize high-quality TMD single crystals can alleviate many material quality concerns and is suitable for emerging electronic devices.
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The structure and properties of a composite consisting of Mg-Y-Nd-Zr alloy (WE43) and various oxides are studied. The particles of the WE43 powder were coated by the nanocrystalline oxide layer by means of a wet chemical deposition process. After that the powder is compressed into solid samples and deformed using high-pressure torsion at room temperature. A second phase is present, both, in pure WE43 alloy and in the one with deposited oxides. We observed that the modification of the alloy by the oxide layer deposition and deformation by high-pressure torsion changes the phase composition and properties of the samples. The samples modified by TiO2 showed the best microhardness and corrosion resistance.