RESUMO
A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals of this compound in a SiO2/Si dielectric matrix has been proposed. The influence of the order of irradiation with ions of phase-forming elements (gallium and oxygen) on the chemical composition of implanted layers is reported. The separation of gallium profiles in the elemental and oxidized states is shown, even in the absence of post-implantation annealing. As a result of annealing, blue photoluminescence, associated with the recombination of donor-acceptor pairs (DAP) in Ga2O3 nanocrystals, appears in the spectrum. The structural characterization by transmission electron microscopy confirms the formation of ß-Ga2O3 nanocrystals. The obtained results open up the possibility of using nanocrystalline gallium oxide inclusions in traditional CMOS technology.
RESUMO
Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (µ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the µ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.
