Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator.

In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 mum, width of 10 mum, and length of 1.0 mm. Photocurrent measurement reveals a Stark shift of ~5 meV (~7 nm) at reverse bias of 3 V (75 kV/cm) and broadening of the resonance peak due to field ionization of electrons and holes was observed for E-field larger than 25 kV/cm. Investigation at wavelength range of 1,300-1320 nm reveals that the largest absorption change occurs at 1317 nm. Optical transmission measurement at this wavelength shows insertion loss of ~8 dB, and extinction ratio of ~5 dB at reverse bias of 5 V. Consequently, methods to improve the performance of the QD-EAM are proposed. We believe that QDs are promising for EAM and the performance of QD-EAM will improve with increasing research efforts.

Temperature and excitation density dependent photoluminescence of sputtering-induced GaAs/AlGaAs quantum dots.

GaAs/AlGaAs quantum dots (QDs) are fabricated by low-energy ion beam sputtering and molecular beam epitaxy (MBE) re-growth. Temperature (6.5-78 K) and excitation power density (0.49-3.06 W cm(-2)) dependent photoluminescence (PL) are presented and discussed in detail. The low-temperature PL emission at 720 nm is attributed to GaAs QDs with height of ∼6.1 nm and base width of ∼23 nm, calculated based on the quantum box model with infinite potential barrier. The calculated QD dimensions are in good agreement with those obtained from atomic force microscopy (AFM) analysis. Nonradiative recombination and Auger-assisted recombination are found to be the main PL quenching mechanisms at high temperature.