Robust charge-density-wave correlations in the electron-doped single-band Hubbard model.

There is growing evidence that the hole-doped single-band Hubbard and t - J models do not have a superconducting ground state reflective of the high-temperature cuprate superconductors but instead have striped spin- and charge-ordered ground states. Nevertheless, it is proposed that these models may still provide an effective low-energy model for electron-doped materials. Here we study the finite temperature spin and charge correlations in the electron-doped Hubbard model using quantum Monte Carlo dynamical cluster approximation calculations and contrast their behavior with those found on the hole-doped side of the phase diagram. We find evidence for a charge modulation with both checkerboard and unidirectional components decoupled from any spin-density modulations. These correlations are inconsistent with a weak-coupling description based on Fermi surface nesting, and their doping dependence agrees qualitatively with resonant inelastic x-ray scattering measurements. Our results provide evidence that the single-band Hubbard model describes the electron-doped cuprates.

Parameter-free differential evolution algorithm for the analytic continuation of imaginary time correlation functions.

We report on differential evolution for analytic continuation: a parameter-free evolutionary algorithm to generate the dynamic structure factor from imaginary time correlation functions. Our approach to this long-standing problem in quantum many-body physics achieves enhanced spectral fidelity while using fewer compute (CPU) hours. The need for fine-tuning of algorithmic control parameters is eliminated by embedding them within the genome to be optimized for this evolutionary computation-based algorithm. Benchmarks are presented for models where the dynamic structure factor is known exactly and experimentally relevant results are included for quantum Monte Carlo simulations of bulk ^{4}He below the superfluid transition temperature.

Experimental realization of one dimensional helium.

As the spatial dimension is lowered, locally stabilizing interactions are reduced, leading to the emergence of strongly fluctuating phases of matter without classical analogues. Here we report on the experimental observation of a one dimensional quantum liquid of 4He using nanoengineering by confining it within a porous material preplated with a noble gas to enhance dimensional reduction. The resulting excitations of the confined 4He are qualitatively different than bulk superfluid helium, and can be analyzed in terms of a mobile impurity allowing for the characterization of the emergent quantum liquid beyond the Luttinger liquid paradigm. The low dimensional helium system offers the possibility of tuning via pressure-from weakly interacting, all the way to the super Tonks-Girardeau gas of strongly interacting hard-core particles.

Theory of Liquid Film Growth and Wetting Instabilities on Graphene.

We investigate wetting phenomena near graphene within the Dzyaloshinskii-Lifshitz-Pitaevskii theory for light gases of hydrogen, helium, and nitrogen in three different geometries where graphene is either affixed to an insulating substrate, submerged or suspended. We find that the presence of graphene has a significant effect in all configurations. When placed on a substrate, the polarizability of graphene can increase the strength of the total van der Waals force by a factor of 2 near the surface, enhancing the propensity towards wetting. In a suspended geometry unique to two-dimensional materials, where graphene is able to wet on only one side, liquid film growth becomes arrested at a critical thickness, which may trigger surface instabilities and pattern formation analogous to spinodal dewetting. The existence of a mesoscopic critical film with a tunable thickness provides a platform for the study of a continuous wetting transition, as well as the engineering of custom liquid coatings. These phenomena are robust to some mechanical deformations and are also universally present in doped graphene and other two-dimensional materials, such as monolayer dichalcogenides.