Microwave Dynamical Conductivity in the Quantum Hall Regime.

Dynamical conductivity contains information of dissipative and nondissipative processes induced by ac-electric fields. In the integer quantum Hall (QH) effect where the nondissipative Hall current is the most prominent feature, its robustness is assured by localized states within the Landau levels. We establish a noncontact method with a circular cavity resonator and detect the real and imaginary parts of the longitudinal and Hall conductivities at a microwave frequency in magnetic fields. The conventional Shubnikov-de Haas oscillations and QH plateaus are observed in the real parts of longitudinal and Hall conductivities, respectively, while periodic structures can be seen in the imaginary parts which are scaled by the QH filling factor. The latter originates from intra-Landau level transitions between different orbital angular momenta. The results demonstrate that the dynamical conductivity measurement provides microscopic information which is not accessible by conventional static methods. The present noncontact method would pave the way to reveal the electron dynamics in other two-dimensional systems such as twisted bilayer graphene.

Negative resistance state in superconducting NbSe2 induced by surface acoustic waves.

We report a negative resistance, namely, a voltage drop along the opposite direction of a current flow, in the superconducting gap of NbSe2 thin films under the irradiation of surface acoustic waves (SAWs). The amplitude of the negative resistance becomes larger by increasing the SAW power and decreasing temperature. As one possible scenario, we propose that soliton-antisoliton pairs in the charge density wave of NbSe2 modulated by the SAW serve as a time-dependent capacitance in the superconducting state, leading to the dc negative resistance. The present experimental result would provide a previously unexplored way to examine nonequilibrium manipulation of the superconductivity.

Etching process of narrow wire and application to tunable-barrier electron pump.

Single electron sources have been studied as a device to establish an electric current standard for 30 years and recently as an on-demand coherent source for fermion quantum optics. In order to construct the single electron source on a GaAs/AlGaAs two-dimensional electron gas (2DEG), it is often necessary to fabricate a sub-micrometer wire by etching. We have established techniques to fabricate the wire made of the fragile 2DEG by combining photolithography and electron beam lithography with one-step photoresist coating, which enables us to etch fine and coarse structures simultaneously. It has been demonstrated that the fabricated single electron source pumps a fixed number of electrons per cycle with radio frequency. The fabrication technique improves the lithography process with lower risk of damage to the 2DEG.

Author Correction: Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag2CrO2.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag2CrO2.

Spintronic devices using antiferromagnets (AFMs) are promising candidates for future applications. Recently, many interesting physical properties have been reported with AFM-based devices. Here we report a butterfly-shaped magnetoresistance (MR) in a micrometer-sized triangular-lattice antiferromagnet Ag2CrO2. The material consists of two-dimensional triangular-lattice CrO2 layers with antiferromagnetically coupled S = 3/2 spins and Ag2 layers with high electrical conductivity. The butterfly-shaped MR appears only when the magnetic field is applied perpendicularly to the CrO2 plane with the maximum MR ratio (≈15%) at the magnetic ordering temperature. These features are distinct from those observed in conventional magnetic materials. We propose a theoretical model where fluctuations of partially disordered spins with the Ising anisotropy play an essential role in the butterfly-shaped MR in Ag2CrO2.

Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure.

Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge conversion signal is crucial, as considerable outputs are needed for plausible applications. Unfortunately, the values obtained so far have been rather low. Here we exploit the spin Hall effect by using Pt, a non-magnetic metal with strong spin-orbit coupling, to generate and detect pure spin currents in a few-layer graphene channel. Furthermore, the outstanding properties of graphene, with long-distance spin transport and higher electrical resistivity than metals, allow us to achieve in our graphene/Pt lateral heterostructures the largest spin-to-charge output voltage at room temperature reported so far in the literature. Our approach opens up exciting opportunities towards the implementation of spin-orbit-based logic circuits and all electrical control of spin information without magnetic field.Spintronic devices with full electrical control rely on electrical generation and detection of spin currents in the absence of magnetic materials. Here, the authors use Pt, a non-magnetic metal, to generate and detect pure spin currents in a few-layer graphene channel, achieving a remarkable spin-to-charge voltage signal at room temperature.

Reciprocal spin Hall effects in conductors with strong spin-orbit coupling: a review.

Spin Hall effect and its inverse provide essential means to convert charge to spin currents and vice versa, which serve as a primary function for spintronic phenomena such as the spin-torque ferromagnetic resonance and the spin Seebeck effect. These effects can oscillate magnetization or detect a thermally generated spin splitting in the chemical potential. Importantly this conversion process occurs via the spin-orbit interaction, and requires neither magnetic materials nor external magnetic fields. However, the spin Hall angle, i.e. the conversion yield between the charge and spin currents, depends severely on the experimental methods. Here we discuss the spin Hall angle and the spin diffusion length for a variety of materials including pure metals such as Pt and Ta, alloys and oxides determined by the spin absorption method in a lateral spin valve structure.

5d iridium oxide as a material for spin-current detection.

Devices based on pure spin currents have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, electric detection of spin currents is essential. The inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble metals such as Pt and Pd, and also Cu-based alloys, have been regarded as potential materials for a spin-current injector, owing to the large direct spin Hall effect. Their spin Hall resistivity ρSH, representing the performance as a detector, is not large enough, however, due mainly because of their low charge resistivity. Here we report that a binary 5d transition metal oxide, iridium oxide, overcomes the limitations encountered in noble metals and Cu-based alloys and shows a very large ρSH~38 µΩ cm at room temperature.

Experimental verification of comparability between spin-orbit and spin-diffusion lengths.

We experimentally confirmed that the spin-orbit lengths of noble metals obtained from weak antilocalization measurements are comparable to the spin diffusion lengths determined from lateral spin valve ones. Even for metals with strong spin-orbit interactions such as Pt, we verified that the two methods gave comparable values which were much larger than those obtained from recent spin torque ferromagnetic resonance measurements. To give a further evidence for the comparability between the two length scales, we measured the disorder dependence of the spin-orbit length of copper by changing the thickness of the wire. The obtained spin-orbit length nicely follows a linear law as a function of the diffusion coefficient, clearly indicating that the Elliott-Yafet mechanism is dominant as in the case of the spin diffusion length.