Ultrafast Exciton Dynamics in the Atomically Thin van der Waals Magnet CrSBr.

Among atomically thin semiconductors, CrSBr stands out as both its bulk and monolayer forms host tightly bound, quasi-one-dimensional excitons in a magnetic environment. Despite its pivotal importance for solid-state research, the exciton lifetime has remained unknown. While terahertz polarization probing can directly trace all excitons, independently of interband selection rules, the corresponding large far-field foci substantially exceed the lateral sample dimensions. Here, we combine terahertz polarization spectroscopy with near-field microscopy to reveal a femtosecond decay of paramagnetic excitons in a monolayer of CrSBr, which is 30 times shorter than the bulk lifetime. We unveil low-energy fingerprints of bound and unbound electron-hole pairs in bulk CrSBr and extract the nonequilibrium dielectric function of the monolayer in a model-free manner. Our results demonstrate the first direct access to the ultrafast dielectric response of quasi-one-dimensional excitons in CrSBr, potentially advancing the development of quantum devices based on ultrathin van der Waals magnets.

Ultra-broadband THz pulses with electric field amplitude exceeding 100 kV/cm at a 200 kHz repetition rate.

We demonstrate a table-top source delivering ultra-broadband THz pulses with electric field strength exceeding 100 kV/cm at a repetition rate of 200 kHz. The source is based on optical rectification of 23 fs pulses at 1030 nm delivered by a ytterbium-doped fiber laser followed by a nonlinear temporal compression stage. We generate THz pulses with a conversion efficiency of up to 0.11 % with a spectrum extending to 11 THz using a 1 mm thick GaP crystal and a conversion efficiency of 0.016 % with a spectrum extending to 30 THz using a 30 µm thick GaSe crystal. The essential features of the emitted THz pulse spectra are well captured by simulations of the optical rectification process relying on coupled nonlinear equations. Our ultrafast laser-based source uniquely satisfies an important requirement of nonlinear THz experiments, namely the emission of ultra-broadband THz pulses with high electric field amplitudes at high repetition rates, opening a route towards nonlinear time-resolved THz experiments with high signal-to-noise ratios.

Moving Dirac nodes by chemical substitution.

Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step toward the realization of novel concepts of electronic devices and quantum computation. By means of Angle-Resolved Photo-Emission Spectroscopy (ARPES) experiments and ab initio simulations, here, we show that Dirac states can be effectively tuned by doping a transition metal sulfide, [Formula: see text], through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge-transfer gap of [Formula: see text] across its phase diagram, lead to the formation of Dirac lines, whose position in k-space can be displaced along the [Formula: see text] symmetry direction and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making [Formula: see text] a model system to functionalize Dirac materials by varying the strength of electron correlations.