InAs/GaAs quantum dot semiconductor saturable absorber for controllable dual-wavelength passively Q-switched fiber laser.

We experimentally demonstrate the first use of 1550-nm InAs/GaAs quantum dot semiconductor saturable absorber mirror (QD-SESAM) in the dual-wavelength passively Q-switched (QS) erbium doped fiber (EDF) laser. The dual-wavelength QS lasing was obtained at a pump threshold of 180 mW with the average output power of 2.2 mW and the spacing between the two lasing wavelengths is 14 nm. A large absorption ranging from 1520 to 1590 nm has been realized when no substrate rotation was employed during the molecular beam epitaxy growth of the QD-SESAM indicating the potential to generate a 60 nm spacing of the dual-wavelength QS lasing peaks by changing the positions in the QD-SESAM and replacing EDF by co-doped fiber as gain medium. These results have provided a new opportunity towards achieving the stable and wide wavelength-tunable dual-modes fiber lasers.

Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?

Anderson localization is a predominant phenomenon in condensed matter and materials physics. In fact, localized and delocalized states often co-exist in one material. They are separated by a boundary called the mobility edge. Mott transition may take place between these two regimes. However, it is widely recognized that an apparent demonstration of Anderson localization or Mott transition is a challenging task. In this article, we present a direct optical observation of a transition of radiative recombination dominant channels from delocalized (i.e., local extended) states to Anderson localized states in the GaInP base layer of a GaInP/GaAs single junction solar cell by the means of the variable-temperature electroluminescence (EL) technique. It is found that by increasing temperature, we can boost a remarkable transition of radiative recombination dominant channels from the delocalized states to the localized states. The delocalized states are induced by the local atomic ordering domains (InP/GaP monolayer superlattices) while the localized states are caused by random distribution of indium (gallium) content. The efficient transfer and thermal redistribution of carriers between the two kinds of electronic states was revealed to result in both a distinct EL mechanism transition and an electrical resistance evolution with temperature. Our study gives rise to a self-consistent precise picture for carrier localization and transfer in a GaInP alloy, which is an extremely technologically important energy material for fabricating high-efficiency photovoltaic devices.

Strong quantum confinement effect and reduced Fröhlich exciton-phonon coupling in ZnO quantum dots embedded inside a SiO2 matrix.

ZnO quantum dots (QDs) embedded in an amorphous SiO2 matrix were examined in depth by using variable-temperature photoluminescence (PL) and optical reflectance spectroscopies. Compared with ZnO bulk crystals, ZnO quantum dots with an average size of 4 nm exhibit a strong quantum confinement effect, evidenced by a large blue shift in both PL and reflectance peaks of excitons. More interestingly, a remarkably reduced long-range Fröhlich interaction was revealed in ZnO QDs. These fascinating effects may make ZnO QDs a very appealing system in the fields of optoelectronics and others.

Formation dynamics of excitons and temporal behaviors of Fano resonance due to the exciton-impurity-phonon configuration interaction in ZnO.

Formation dynamics of free and neutral donor bound excitons (FX and D(0)X) in a high quality ZnO single crystal are studied by means of time-resolved photoluminescence (TRPL) at various temperatures. At low-temperatures, FX and D(0)X formation times are determined to be ~5 and ~10 ps, respectively, by fitting the rise process with the Boltzmann sigmoidal function. Temporal information of FX- and D(0)X-longitudinal optical (LO) phonon coupling is also acquired by measuring TRPL spectra of the first-order LO phonon-assisted FX and D(0)X transitions. In particular, interesting time evolution of luminescence intensity in the Fano resonance region due to the configuration interaction of exciton-impurity-phonon is explored.