Low-threshold lasing from bound states in the continuum with dielectric metasurfaces.

Bound states in the continuum (BICs) with extremely large quality factors (Q factors) can enhance the light-matter interaction and thus achieve low-threshold lasing. Here, we theoretically propose and experimentally demonstrate the low-threshold lasing at room temperature based on BICs. A threshold of approximately 306.7 W/cm2 (peak intensity) under a 7.5 ns-pulsed optical excitation is presented in an all-dielectric metasurface system consisting of titanium dioxide (TiO2) nanopillars with a dye film. Also, the multimode lasing can be excited by the higher pumping. Our results may find exciting applications in on-chip coherent light sources, filtering, and sensing.

Collective Transport for Nonlinear Current-Voltage Characteristics of Doped Conducting Polymers.

Origin of nonlinear transport phenomena in conducting polymers has long been a topic of intense controversies. Most previous knowledge has attributed the macroscopic nonlinear I-V characteristics to individual behaviors of elementary resistors in the network. In this Letter, we show via a systematic dimensionality-dependent transport investigation, that understanding the nonlinear transport in conducting polymers must include the collective transport effect in a percolation network. The possible mediation of percolation threshold p_{c} by controlling the samples' dimensionality unveiled the collective effect in growth of percolation paths driven by electric field, enabling us to draw a smooth connection between two typically observed nonlinear phenomena, dissipative tunnelinglike and threshold-limited transport, which have been controversial for years. The possible microscopic origins of the collective transport are discussed within the Coulomb blockade theory.

Wafer-Scale Fabrication of Ultra-High Aspect Ratio, Microscale Silicon Structures with Smooth Sidewalls Using Metal Assisted Chemical Etching.

Silicon structures with ultra-high aspect ratios have great potential applications in the fields of optoelectronics and biomedicine. However, the slope and increased roughness of the sidewalls inevitably introduced during the use of conventional etching processes (e.g., Bosch and DRIE) remain an obstacle to their application. In this paper, 4-inch wafer-scale, ultra-high aspect ratio (>140:1) microscale silicon structures with smooth sidewalls are successfully prepared using metal-assisted chemical etching (MacEtch). Here, we clarify the impact of the size from the metal catalytic structure on the sidewall roughness. By optimizing the etchant ratio to accelerate the etch rate of the metal-catalyzed structure and employing thermal oxidation, the sidewall roughness can be significantly reduced (average root mean square (RMS) from 42.3 nm to 15.8 nm). Simulations show that a maximum exciton production rate (Gmax) of 1.21 × 1026 and a maximum theoretical short-circuit current density (Jsc) of 39.78 mA/cm2 can be obtained for the micropillar array with smooth sidewalls, which have potential applications in high-performance microscale photovoltaic devices.

Mie Resonances Enabled Subtractive Structural Colors with Low-Index-Contrast Silicon Metasurfaces.

All-dielectric structural colors are attracting increasing attention due to their great potential for various applications in display devices, imaging security certification, optical data storage, and so on. However, it remains a great challenge to achieve vivid structural colors with low-aspect-ratio silicon nanostructures directly on a silicon substrate, which is highly desirable for future integrated optoelectronic devices. The main obstacle comes from the difficulty in achieving strong Mie resonances by Si nanostructures on low-index-contrast substrates. Here, we demonstrate a generic principle to create vivid bright field structural colors by using silicon nanopillars directly on top of the silicon substrate. Complementary colors across the full visible spectrum are achieved as a result of the enhanced absorption due to Mie resonances. It is shown that the color saturation increases with the increasing of the nanopillar height. Remarkably, blue and black colors are generated by trapezoid nanopillar arrays as a result of the absorption at long wavelengths or all visible wavelengths. Our strategy provides a powerful scheme for accelerating the integrated optoelectronic applications in nanoscale color printing, imaging, and displays.

Lasing action in a strongly coupled silicon nanowire pair.

High-index dielectric nanostructures are of particular interest for nanoscale lasing due to their low absorption losses. However, the relatively weak near-field restricts the isolated dielectric cavities as low-threshold integrated on-chip laser sources. Here, we demonstrate lasing action in a silicon nanowire pair with 32 nm gap coated with dye-doped shell on the silicon-on-insulator platform. It is found that the quality factor Q is dominated by the coupling of the silicon nanowire pair, which depends on the gap size, the nanowire width, and the dye thickness. A lasing peak at the wavelength of 529 nm with FWHM of 0.6 nm is experimentally realized by the Si nanowire pair width, and the corresponding pumping power threshold is ∼34 µW/cm2. The proposed strategy, based on the well-established Si planar process, lays the groundwork for practical integrated nanolasers that have potential applications in photonic circuits.

Facile and stable fabrication of wafer-scale, ultra-black c-silicon with 3D nano/micro hybrid structures for solar cells.

Three-dimensional (3D) silicon (Si) nanostructures have attracted much attention in solar cells due to their excellent broadband and omnidirectional light-harvesting properties. However, the development of 3D Si nanostructures is still plagued by the trade-off between structural complexity and fabrication difficulty. Herein, we proposed a facile and stable approach toward the fabrication of wafer-scale, ultra-black crystalline silicon (c-Si) with nano/micro hybrid structures. The distinguishing advantage of this approach is that it allows the formation of 3D Si nano/micro hybrid structures in a single-round process, avoiding the need for multiple iterations of lithography, coating, and etching required in conventional processes. The nano/micro hybrid structure arrays we fabricated show a low reflectance of <1% in the 600-1000 nm wavelength range and absorb 98.82% of incident light in the visible and near-infrared regions from 400 to 1100 nm under AM 1.5 G illumination. Solar cells made from nano/micro hybrid 3D structure arrays have an efficiency improvement of about 11.4% compared to those made from mono-micropillar arrays, and they have potential applications in high-performance photovoltaic devices.

Bright Field Structural Colors in Silicon-on-Insulator Nanostructures.

Structural coloration with artificially nanostructured materials is emerging as a prospective alternative to traditional pigments for the high resolution, sustainable recycling, and long-time durability. However, achieving bright field structural colors with dielectric nanostructures remains a great challenge due to the weak scattering in an asymmetric environment. Here, we demonstrate all-dielectric bright field structural colors with diffraction-limited resolution on the silicon-on-insulator platform. The backscattering is strongly enhanced from the constructive interference between Mie resonances of individual Si antennas and Fabry-Perot resonances supported by the SiO2 layer. The fabricated colors with varying hues and saturations show strong insensitivity with respect to the interparticle spacing and, remarkably, the viewing angle under resonant conditions. Compared with creating a quasi-homogeneous environment, our strategy is solid and complementary metal-oxide semiconductor integrable, paving the way for practical applications of structural colors in nanoscale color printing, microdisplays, and imaging.

A tied Fermi liquid to Luttinger liquid model for nonlinear transport in conducting polymers.

Organic conjugated polymers demonstrate great potential in transistors, solar cells and light-emitting diodes, whose performances are fundamentally governed by charge transport. However, the morphology-property relationships and the underpinning charge transport mechanisms remain unclear. Particularly, whether the nonlinear charge transport in conducting polymers is appropriately formulated within non-Fermi liquids is not clear. In this work, via varying crystalline degrees of samples, we carry out systematic investigations on the charge transport nonlinearity in conducting polymers. Possible charge carriers' dimensionality is discussed when varying the molecular chain's crystalline orders. A heterogeneous-resistive-network (HRN) model is proposed based on the tied-link between Fermi liquids (FL) and Luttinger liquids (LL), related to the high-ordered crystalline zones and weak-coupled amorphous regions, respectively. The HRN model is supported by precise electrical and microstructural characterizations, together with theoretic evaluations, which well describes the nonlinear transport behaviors and provides new insights into the microstructure-correlated charge transport in organic solids.

Proposed a self-absorption internal standard model to detect element concentrations of complex constituent material with a single emission line of element in laser plasmas.

Laser induced plasmas (LIPs) method is a highly regarded approach to evaluate the chemical composition of materials. But the strong self-absorption of the radiation seriously affects its accuracy. Meanwhile, the model based on self-absorption phenomenon makes its application very difficult. In this work, a self-absorption internal standard (SAIS) model is proposed for detection of the multi-element concentrations of complex constituent material with a single emission line of the element in laser plasmas. A typical LIPs experiment system is set up to generate plasmas, and the soil is selected as a test sample. The average electron temperature (0.975 eV) and electron density (1.44×1018 cm-3) are determined by the Boltzmann plot and emission lines Stark broadening, respectively. The plasmas are diagnosed as in local thermodynamic equilibrium condition. The emission lines selected to calculate the concentration of sample contain a wide set of kt values (0.575×10-30∼37.2×10-30 m3). Then, the concentrations of some elements are calculated by the model using single emission line of each element. It is found that the concentrations of the five elements (Ti, Fe, Mg, Al, Si) calculated by SAIS model are relatively consistent with the results of the traditional chemical testing methods. This indicated that the SAIS model is an effective and neat method for multi-element concentrations detection of complex constituent materials.

Ultra-Broadband High-Efficiency Solar Absorber Based on Double-Size Cross-Shaped Refractory Metals.

In this paper, a theoretical simulation based on a finite-difference time-domain method (FDTD) shows that the solar absorber can reach ultra-broadband and high-efficiency by refractory metals titanium (Ti) and titanium nitride (TiN). In the absorption spectrum of double-size cross-shaped absorber, the absorption bandwidth of more than 90% is 1182 nm (415.648-1597.39 nm). Through the analysis of the field distribution, we know the physical mechanism is the combined action of propagating plasmon resonance and local surface plasmon resonance. After that, the paper has a discussion about the influence of different structure parameters, polarization angle and angle of incident light on the absorptivity of the absorber. At last, the absorption spectrum of the absorber under the standard spectrum of solar radiance Air Mass 1.5 (AM1.5) is studied. The absorber we proposed can be used in solar energy absorber, thermal photovoltaics, hot-electron devices and so on.

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals.

In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.

Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application.

Resistive switching devices have tremendous potential for memory, logic, and neuromorphic computing applications. Cation-based resistive switching devices intrinsically show nonvolatile memory characteristics under high compliance current (I CC), while show volatile threshold switching (TS) selector characteristics under low I CC. However, separate researches about cation-based memory or selector are hard to evade the typical current-retention dilemma, which results in the hardship to obtain low-current memory and high-current selector. Here, we propose a novel strategy to realize nonvolatile storage characteristics in a volatile TS device by modulating the rupture degree of conductive filament (CF). Enlarging the rupture degree of the CF with a certain RESET process, as confirmed by transmission electron microscope and energy dispersive spectrometry results, the threshold voltage of the Ag/HfO2/Pt TS devices can be enlarged from 0.9 to 2.8 V. Generation of the voltage difference enables the volatile TS devices the ability of self-selective nonvolatile storage. Increasing the RESET magnitude and shrinking the device size have been proved effective ways to increase the read window of the TS memory (TSM) devices. Evading the limit of the current-retention dilemma, ultra-low energy dissipation can be obtained by decreasing I CC to nA level. With self-selective, low-energy, and potential high-density integration characteristics, the proposed TSM device can act as a potential supplement of novel storage class memories.

Unexpected Intermediate State Photoinduced in the Metal-Insulator Transition of Submicrometer Phase-Separated Manganites.

At ultrafast timescales, the initial and final states of a first-order metal-insulator transition often coexist forming clusters of the two phases. Here, we report an unexpected third long-lived intermediate state emerging at the photoinduced first-order metal-insulator transition of La_{0.325}Pr_{0.3}Ca_{0.375}MnO_{3}, known to display submicrometer length-scale phase separation. Using magnetic force microscopy and time-dependent magneto-optical Kerr effect, we determined that the third state is a nanoscale mixture of the competing ferromagnetic metallic and charge-ordered insulating phases, with its own physical properties. This discovery bridges the two different families of colossal magnetoresistant manganites known experimentally and shows for the first time that the associated states predicted by theory can coexist in a single sample.

Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects.

Cation-based resistive switching (RS) devices, dominated by conductive filaments (CF) formation/dissolution, are widely considered for the ultrahigh density nonvolatile memory application. However, the current-retention dilemma that the CF stability deteriorates greatly with decreasing compliance current makes it hard to decrease operating current for memory application and increase driving current for selector application. By centralizing/decentralizing the CF distribution, this current-retention dilemma of cation-based RS devices is broken for the first time. Utilizing the graphene impermeability, the cation injecting path to the RS layer can be well modulated by structure-defective graphene, leading to control of the CF quantity and size. By graphene defect engineering, a low operating current (≈1 µA) memory and a high driving current (≈1 mA) selector are successfully realized in the same material system. Based on systematically materials analysis, the diameter of CF, modulated by graphene defect size, is the major factor for CF stability. Breakthrough in addressing the current-retention dilemma will instruct the future implementation of high-density 3D integration of RS memory immune to crosstalk issues.

Ultra-high-frequency microwave response from flexible transparent Au electromagnetic metamaterial nanopatterned antenna.

Flexible transparent materials are a hot spot in current research but also a key technical difficulty in industry. They are playing an increasingly important role in flexible transparent display applications such as organic light-emitting diodes, transparent electrodes, and so on. On the other hand, the present research on nanopatterned antennas is mainly concentrated on the optical frequency but rarely on the microwave (such as 3G, 4G, and 5G) and terahertz frequency band communications, where nanopatterned antennas can have many novel applications. To the authors' knowledge, this is the first paper that presents a method for preparing a flexible transparent Au electromagnetic metamaterial nanopatterned antenna. We study its free-space performance at ultra-high frequency and its application in electronic products such as smartphones, tablets, personal computers, and wearable devices (such as smart watches) which have the function of mobile communication. The experimental results showed that the transparency of the antenna designed and fabricated in this work can be as high as 94%, and its efficiency can reach 74.5%-91.9% of antennas commonly seen at present in academia and industry. By adjusting the capacitive and inductive reactance of the nanopatterned antenna's matching circuit, combined with its measured efficiency and 3D electromagnetic simulation results, we speculate on the mechanism of the Au electromagnetic metamaterial nanopatterned antenna with good performance.

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.

Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6 passivation of Ge was utilized to form a high-quality SiO2/Si interfacial layer between the high-κ dielectric and channels. Strained Ge QW pMOSFETs achieve the significantly improved effective hole mobility µ eff as compared with the relaxed Si and Ge control devices. At an inversion charge density of Q inv of 2 × 1012 cm-2, Ge QW pMOSFETs on SOI exhibit a 104% µ eff enhancement over relaxed Ge control transistors. It is also demonstrated that µ eff of Ge pMOSFETs on SOI can be further boosted by applying an external uniaxial compressive strain.

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.

Conductive-bridge random access memory (CBRAM) is considered a strong contender of the next-generation nonvolatile memory technology. Resistive switching (RS) behavior in CBRAM is decided by the formation/dissolution of nanoscale conductive filament (CF) inside RS layer based on the cation injection from active electrode and their electrochemical reactions. Remarkably, RS is actually a localized behavior, however, cation injects from the whole area of active electrode into RS layer supplying excessive cation beyond the requirement of CF formation, leading to deterioration of device uniformity and reliability. Here, an effective method is proposed to localize cation injection into RS layer through the nanohole of inserted ion barrier between active electrode and RS layer. Taking an impermeable monolayer graphene as ion barrier, conductive atomic force microscopy results directly confirm that CF formation is confined through the nanohole of graphene due to the localized cation injection. Compared with the typical Cu/HfO2 /Pt CBRAM device, the novel Cu/nanohole-graphene/HfO2 /Pt device shows improvement of uniformity, endurance, and retention characteristics, because the cation injection is limited by the nanohole graphene. Scaling the nanohole of ion barrier down to several nanometers, the single-CF-based CBRAM device with high performance is expected to achieve by confining the cation injection at the atomic scale.

Two-dimensional gratings of hexagonal holes for high order diffraction suppression.

We propose two-dimensional gratings comprised of a large number of identical and similarly oriented hexagonal holes for the high order diffraction suppression. An analytical study of the diffraction property for such gratings, based on both square and triangle arrays, is described. The dependence of the high order diffraction property on the hole shape and size is investigated. Notably, theoretical calculation reveals that the 2nd, 3rd and 4th order diffractions adjacent to the 1st order diffraction can be completely suppressed, and the 5th order diffraction efficiency is as low as 0.01%, which will be submerged in the background noise for most practical applications. The 1st order diffraction intensity efficiency 6.93% can be achieved as the hexagonal holes along y-axis connect with each other. For the case of b=Py/3, the 1st order diffraction intensity efficiency is 3.08%. The experimental results are also presented, confirming the theoretical predictions. Especially, our two-dimensional gratings have the ability to form free-standing structures which are highly desired for the x-ray region. Comparing with the grating of the square array, the grating of the triangle array is easy to be fabricated by silicon planar process due to the large spacing between any two adjacent holes. Our results should be of great interest in a wide spectrum unscrambling from the infrared to the x-ray region.

Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax.

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved. As a result, maximum oscillation frequency (fmax) which indicates transistors' power amplification ability has been disappointing. Here, we present submicron field-effect transistors with specially designed low-resistance gate and excellent source/drain contact, and therefore significantly improved fmax. The fabrication was assisted by the advanced 8-inch CMOS back-end-of-line technology. A 200-nm-gate-length GFET achieves fT/fmax = 35.4/50 GHz. All GFET samples with gate lengths ranging from 200 nm to 400 nm possess fmax 31-41% higher than fT, closely resembling Si n-channel MOSFETs at comparable technology nodes. These results re-strengthen the promise of graphene field-effect transistors in next generation semiconductor electronics.

Characterization of the photocurrents generated by the laser of atomic force microscopes.

The conductive atomic force microscope (CAFM) has become an essential tool for the nanoscale electronic characterization of many materials and devices. When studying photoactive samples, the laser used by the CAFM to detect the deflection of the cantilever can generate photocurrents that perturb the current signals collected, leading to unreliable characterization. In metal-coated semiconductor samples, this problem is further aggravated, and large currents above the nanometer range can be observed even without the application of any bias. Here we present the first characterization of the photocurrents introduced by the laser of the CAFM, and we quantify the amount of light arriving to the surface of the sample. The mechanisms for current collection when placing the CAFM tip on metal-coated photoactive samples are also analyzed in-depth. Finally, we successfully avoided the laser-induced perturbations using a two pass technique: the first scan collects the topography (laser ON) and the second collects the current (laser OFF). We also demonstrate that CAFMs without a laser (using a tuning fork for detecting the deflection of the tip) do not have this problem.