RESUMO
A tunable membrane-type thin film bulk acoustic wave resonator (TFBAR) based on a Ba(0.3)Sr(0.7)TiO(3)(BST) thin film has been fabricated. The resonance and antiresonance frequencies of the device can be altered by applying a dc bias: both shift down with increasing dc electric field. The resonance and antiresonance frequencies showed a tuning of -2.4% and -0.6%, respectively, at a maximum dc electric field of 615 kV/cm. The electromechanical coupling factor of the device increased up to 4.4%. We demonstrate that the tuning of the TFBAR is nonhysteretic. The Q-factor of the device showed some variation with dc bias and is about 200. The tuning of the TFBAR is caused by the dc bias dependence of the sound velocity and the intrinsic electromechanical coupling factor of the BST layer. We apply our recently developed theory on the electrical tuning of dc bias induced acoustic resonances in paraelectric thin films to successfully model the tuning behavior of the TFBAR. The modeling enabled us to de-embed the intrinsic electromechanical properties of the BST thin film. We show that the mechanical load of our device does not significantly degrade the tuning performance of the BST layer. The performance of the TFBAR is compared with the available data on varactor tuned TFBARs.
RESUMO
Direct current (DC) bias-dependent acoustic resonance phenomena have been observed in micromachined tunable thin film capacitors based on Ba(0.3)Sr(0.7)TiO3 (BST) thin films. The antiresonance frequency is only weakly DC bias dependent, and the resonance frequency exhibits a much stronger dependence on the applied DC bias. The resonance frequency shifted by 1.2% for a frequency of about 6.7 GHz and an applied field of 667 KV/cm. At the same time the effective electromechanical coupling constant k(2)(t,eff) increased to 2.0%. The tuning of the resonance frequency depends on the tunability of the film permittivity and on the mechanical load on the piezoactive layer. The experimental observations correlate well with the theoretical predictions derived from the free energy P expansion using Landau theory.
