ß-Ketoiminato-based copper(ii) complexes as CVD precursors for copper and copper oxide layer formation.

The synthesis of ketoiminato copper(ii) complexes [Cu(OCRCHC(CH3)NCH2CH2X)(µ-OAc)]2 (X = NMe2: 4a, R = Me; 4b, R = Ph. X = OMe: 5, R = Me) and [Cu(OCRCHCMeNCH2CH2NEt2)(OAc)] (6, R = Me) from RC(O)CHC(CH3)N(H)CH2CH2X (X = NMe2: 1a, R = Me; 1b, R = Ph. X = NEt2: 1c, R = Me. X = OMe: 2, R = Me) and [Cu(OAc)2·H2O] (3) is reported. The molecular solid-state structures of 4-6 were determined by single crystal X-ray diffraction studies, showing that 4a,b and 5 are dimers which are set up by two [{Cu(µ-OAc)L}] (L = ketoiminato ligand) units featuring a square-planar Cu2O2 core with a distorted square-pyramidal geometry at Cu(ii). In contrast, 6 is monomeric with a tridentate-coordinated OCMeCHCMeNCH2CH2NEt2 ligand and a σ-bonded acetate group, thus inducing a square-planar environment around Cu(ii). The thermal behavior of all complexes was studied by TG (Thermogravimetry) and DSC (Differential Scanning Calorimetry) under an atmosphere of Ar and O2. Complex 4b shows the highest first onset temperature at 213 °C (under O2) and 239 °C (Ar). PXRD studies confirmed the formation of CuO under an atmosphere of O2 and Cu/Cu2O under Ar. TG-MS studies, exemplarily carried out with 4a, indicate the elimination of the ketoiminato ligands with detectable fragments such as m/z = 15, 28, 43, 44, 45, and 60 at a temperature above 250 °C. Vapor pressure measurements displayed that 5 shows the highest volatility of 3.6 mbar at 70 °C (for comparison, 4a, 1.4; 4b, 1.3; 6, 0.4 mbar) and hence 4a and 5 were used as MOCVD precursors for Cu/Cu2O deposition on Si/SiO2 at substrate temperatures of 450 °C and 510 °C. The deposition experiments were carried out under an atmosphere of nitrogen as well as oxygen. The as-obtained layers were characterized by SEM, EDX, XPS, and PXRD, showing that with oxygen as the reactive gas a mixture of metallic copper and copper(i) oxide without carbon impurities was formed, while under N2 Cu films with 53-68 mol% C contamination were produced. In a deposition experiment using precursor 5 at 510 °C under N2 a pure copper film was obtained.

Magnesium ß-ketoiminates as CVD precursors for MgO formation.

The synthesis and characterization of bis(ketoiminato)magnesium(ii) complexes of composition [Mg(OCR2CH2CHR1NCH2CH2X)2] (X = NMe2: 3a, R1 = R2 = Me; 3b, R1 = Me, R2 = Ph. X = OMe: 3c, R1 = R2 = Me) are reported. Complexes 3a-c are accessible by the reaction of C(O)R2CH2CHR1N(H)CH2CH2X (X = NMe2: 1a, R1 = R2 = Me; 1b, R1 = Me, R2 = Ph. X = OMe: 1c, R1 = R2 = Me) with Mg n Bu2. The structure of 3b in the solid state was determined by a single crystal X-ray diffraction study, confirming that the Mg(ii) ion is hexa-coordinated by two ketoiminato ligands, while each of the latter coordinates with its two N- and one O-donor atom in an octahedral MgN6O2 coordination environment in the OC-6-33 stereo-isomeric form. The thermal behavior of 3a-c was studied by TG and DSC under an atmosphere of Ar and O2 respectively. The respective Me-substituted complexes 3a,c decompose at lower temperatures (3a, 166 °C; 3c, 233 °C) than the phenyl derivative 3b (243 °C). PXRD studies indicate the formation of MgO. Additionally, TG-MS studies were exemplarily carried out for 3a, indicating the release of the ketoiminato ligands. Vapor pressure measurements were conducted at 80 °C, whereby 3a,c possess with 5.6 mbar (3a) and 2.0 mbar (3c) significantly higher volatilities than 3b (0.07 mbar). Complexes 3a-c were used as MOCVD precursors for the deposition of thin MgO films on silicon substrates. It was found that only with 3a,c thin, dense and rather granulated MgO layers of thicknesses between 28-147 nm were produced. The as-deposited MgO layers were characterized by SEM, EDX, and XPS measurements and the thicknesses of the as-deposited layers were measured by Ellipsometry and SEM cross-section images. Apart from magnesium and oxygen a carbon content between 3-4 mol% was determined.

Synthesis of [{AgO2CCH2OMe(PPh3)} n ] and theoretical study of its use in focused electron beam induced deposition.

The synthesis, chemical and physical properties of [{AgO2CCH2OMe} n ] (1) and [{AgO2CCH2OMe(PPh3)} n ] (2) are reported. Consecutive reaction of AgNO3 with HO2CCH2OMe gave 1, which upon treatment with PPh3 produced 2. Coordination compound 2 forms a 1D coordination polymer in the solid state as evidenced by single crystal X-ray structure analysis. The coordination geometry at Ag+ is of the [3 + 1] type, whereby the carboxylate anions act as bridging ligands. The formation of PPh3-Ag(I) coordinative bonds results in distorted T-shaped AgPO2 units, which are stabilized further by an additional O-Ag dative bond. TG and TG-MS measurements show that 1 and 2 decompose at 190-250 °C (1) and 260-300 °C (2) via decarboxylation, involving Ag-P (2), C-C and C-O bond cleavages to give elemental silver as confirmed by PXRD studies. In order to verify if polymeric 2 is suitable as a FEBID precursor for silver deposition, its vapor pressure was determined (p170 °C = 5.318 mbar, ∆Hvap = 126.1 kJ mol-1), evincing little volatility. Also EI and ESI mass spectrometric studies were carried out. The dissociation of the silver(I) compound 2 under typical electron-driven FEBID conditions was studied by DFT (B3LYP) calculations on monomeric [AgO2CCH2OMe(PPh3)]. At an energy of the secondary electrons up to 0.8 eV elimination of PPh3 occurs, giving Ag+ and O2CCH2OMe-. Likewise, by release of PPh3 from [AgO2CCH2OMe(PPh3)] the fragment [AgO2CCH2OMe]- is formed from which Ag+ and O2CCH2OMe- is generated, further following the first fragmentation route. However, at 1.3 eV the initial step is decarboxylation giving [AgCH2OMe(PPh3)], followed by Ag-P and Ag-C bond cleavages.

Crystal structure of bis-[tetra-kis-(tri-phenyl-phosphane-κP)silver(I)] (nitrilo-tri-acetato-κ(4) N,O,O',O'')(tri-phenyl-phosphane-κP)argentate(I) with an unknown amount of methanol as solvate.

The structure of the title compound, [Ag(C18H15P)4]2[Ag(C6H6NO6)(C18H15P)], exhibits trigonal (P-3) symmetry, with a C 3 axis through all three complex ions, resulting in an asymmetric unit that contains one third of the atoms present in the formula unit. The formula unit thus contains two of the cations, one anion and disordered mol-ecules of methanol as the packing solvent. Attempts to refine the solvent model were unsuccessful, indicating uninter-pretable disorder. Thus, the SQUEEZE procedure in PLATON [Spek (2015 ▸). Acta Cryst. C71, 9-18] was applied, accounting for 670 electrons per unit cell, representing approximately 18 mol-ecules of methanol in the formula unit. The stated crystal data for M r, µ etc do not take these into account.

Zirconium and Hafnium Twin Monomers for Mixed Oxides.

The synthesis of Zr and Hf twin monomers of type [M(2-OCH2 c C4 H3 O)4 (x HOCH2 c C4 H3 O)] (3, M=Zr, x=0; 4, M=Hf, x=1) and M[(2-OCH2 -C6 H4 O)2 (2-HOCH2 -C6 H4 OH)] (5, M=Zr; 6, M=Hf) by reacting M(OR)4 (M=Zr, R=n C3 H7 , 1; M=Hf, R=n C4 H9 , 2) with 2-furylmethanol or 2-hydroxybenzyl alcohol is discussed. Complexes 3-6 were homopolymerized under acidic conditions. Additionally, 5 and 6 were copolymerized with 2,2'-spirobi[4 H-1,3,2-benzodioxasiline] (SBS). Under acidic conditions SBS forms a phenolic resin/SiO2 nanostructured material. The resulting hybrid materials from the homopolymerization of 3-6 and the copolymerized materials from 5 and 6 were characterized by standard solid-state analytics. The inorganic lattice of the MO2 materials from the homopolymerized complexes 3-6 and SiO2 /MO2 from the copolymerization of 5 and 6 with SBS was obtained by air oxidation. The oxide materials were characterized by X-ray powder diffraction (XRPD) and energy-dispersive X-ray analysis, which proved their identity. The inner surface area was determined by N2 adsorption/desorption studies, which revealed surface areas of 100 m2 g-1 for MO2 . The mixed oxides SiO2 /MO2 were additionally investigated by differential scanning calorimetry and variable-temperature XRPD to study the thermal behavior. It was found that crystallization of tetragonal MO2 nanoparticles is characteristic within the SiO2 matrix, but higher sintering temperatures caused crystallization of the SiO2 lattice.