Graduate entry to nursing: An exploration of the demographic characteristics of New Zealand students.

This paper describes the characteristics of student enrolled in New Zealand's first Graduate Entry to Practice (GEN) programme. Data were collected from students enrolled in the first five cohorts of the programme from 2014 to 2018 (n = 93). In total 69 students responded to an on-line, self-report survey, resulting in a 74% return rate. The majority of respondents were female (87%, n = 60), aged 21-30 (68%, n = 47) and New Zealand European (77%, n = 53). The educational background of respondents ranged from theology, to marine biology and more commonly science based degrees. Their motivation for entering nursing was to work in a diverse and caring profession with many wanting to eventually move to advanced practice roles. A key finding was that the students considered that the primary role of the nurse was the provision of holistic care to both the patient and their family. The majority wish to start their nursing careers in the acute hospital based areas of care provision.

Physical origins of current and temperature controlled negative differential resistances in NbO2.

Negative differential resistance behavior in oxide memristors, especially those using NbO2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here we examine NbO2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.

Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity.

A novel Ag/oxide-based threshold switching device with attractive features including ≈1010 nonlinearity is developed. High-resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.

Thermally induced crystallization in NbO2 thin films.

Niobium dioxide can exhibit negative differential resistance (NDR) in metal-insulator-metal (MIM) devices, which has recently attracted significant interest for its potential applications as a highly non-linear selector element in emerging nonvolatile memory (NVM) and as a locally-active element in neuromorphic circuits. In order to further understand the processing of this material system, we studied the effect of thermal annealing on a 15 nm thick NbO2 thin film sandwiched inside a nanoscale MIM device and compared it with 180 nm thick blanket NbOx (x = 2 and 2.5) films deposited on a silicon dioxide surface as references. A systematic transmission electron microscope (TEM) study revealed a similar structural transition from amorphous to a distorted rutile structure in both cases, with a transition temperature of 700 °C for the NbO2 inside the MIM device and a slightly higher transition temperature of 750 °C for the reference NbO2 film. Quantitative composition analysis from electron energy loss spectroscopy (EELS) showed the stoichiometry of the nominal 15 nm NbO2 layer in the as-fabricated MIM device deviated from the target 1:2 ratio because of an interaction with the electrode materials, which was more prominent at elevated annealing temperature.

Trilayer Tunnel Selectors for Memristor Memory Cells.

An integrated memory cell with a mem-ristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector yields a large nonlinearity (>10(4) ), high endurance (>10(8) ), low variability, and low temperature dependence.

Deterministic nanoparticle assemblies: from substrate to solution.

The deterministic assembly of metallic nanoparticles is an exciting field with many potential benefits. Many promising techniques have been developed, but challenges remain, particularly for the assembly of larger nanoparticles which often have more interesting plasmonic properties. Here we present a scalable process combining the strengths of top down and bottom up fabrication to generate deterministic 2D assemblies of metallic nanoparticles and demonstrate their stable transfer to solution. Scanning electron and high-resolution transmission electron microscopy studies of these assemblies suggested the formation of nanobridges between touching nanoparticles that hold them together so as to maintain the integrity of the assembly throughout the transfer process. The application of these nanoparticle assemblies as solution-based surface-enhanced Raman scattering (SERS) materials is demonstrated by trapping analyte molecules in the nanoparticle gaps during assembly, yielding uniformly high enhancement factors at all stages of the fabrication process.

Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch.

Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we examine the electrical performance and scalability of this system and demonstrate devices with ultrafast (<100 ps) switching, long state retention (no measurable relaxation after 6 months), and high endurance (>3 × 10(7) cycles). A possible switching mechanism based on ion motion in the film is discussed based on these observations.