Ultrathin Terahertz Quarter-wave plate based on Split Ring Resonator and Wire Grating hybrid Metasurface.

Planar metasurface based quarter-wave plates offer various advantages over conventional waveplates in terms of compactness, flexibility and simple fabrication; however they offer very narrow bandwidth of operation. Here, we demonstrate a planar terahertz (THz) metasurface capable of linear to circular polarization conversion and vice versa in a wide frequency range. The proposed metasurface is based on horizontally connected split ring resonators and is realized on an ultrathin (0.05λ) zeonor substrate. The fabricated quarter waveplate realizes linear to circular polarization conversion in two broad frequency bands comprising 0.64-0.82 THz and 0.96-1.3 THz with an insertion loss ranging from -3.9 to -10 dB. By virtue of ultrathin sub wavelength thickness, the proposed waveplate design is well suited for application in near field THz optical systems. Additionally, the proposed metasurface design offers novel transmission phase characteristics that present further opportunities to realize dynamic polarization control of incident waves.

Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors.

The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities.