Ultra-sensitive and selective NH3 room temperature gas sensing induced by manganese-doped titanium dioxide nanoparticles.

The study of the fabrication of ultra-high sensitive and selective room temperature ammonia (NH3) and nitrogen dioxide (NO2) gas sensors remains an important scientific challenge in the gas sensing field. This is motivated by their harmful impact on the human health and environment. Therefore, herein, we report for the first time on the gas sensing properties of TiO2 nanoparticles doped with various concentrations of manganese (Mn) (1.0, 1.5, 2.0, 2.5 and 3.0mol.% presented as S1, S2, S3, S4 and S5, respectively), synthesized using hydrothermal method. Structural analyses showed that both undoped and Mn-doped TiO2 crystallized in tetragonal phases. Optical studies revealed that the Mn doped TiO2 nanoparticles have enhanced UV→Vis emission with a broad shoulder at 540nm, signifying induced defects by substituting Ti4+ ions with Mn2+. The X-ray photoelectron spectroscopy and the electron paramagnetic resonance studies revealed the presence of Ti3+ and singly ionized oxygen vacancies in both pure and Mn doped TiO2 nanoparticles. Additionally, a hyperfine split due to Mn2+ ferromagnetic ordering was observed, confirming incorporation of Mn ions into the lattice sites. The sensitivity, selectivity, operating temperature, and response-recovery times were thoroughly evaluated according to the alteration in the materials electrical resistance in the presence of the target gases. Gas sensing studies showed that Mn2+ doped on the TiO2 surface improved the NH3 sensing performance in terms of response, sensitivity and selectivity. The S1 sensing material revealed higher sensitivity of 127.39 at 20 ppm NH3 gas. The sensing mechanism towards NH3 gas is also proposed.

Deep level defect correlated emission and Si diffusion in ZnO:Tb(3+) thin films prepared by pulsed laser deposition.

Terbium (Tb(3+)) doped zinc oxide (ZnO) or (ZnO:Tb(3+)) thin films were grown on silicon substrates by the pulsed laser deposition technique at different growth temperatures that were varied from room temperature (RT) to 400°C. The effects of substrate temperature on the structural and optical properties of the ZnO:Tb(3+) films were investigated by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and RT photoluminescence spectroscopy. The band to band and deep level defect emissions were observed for all substrate temperatures. The silicon that has diffused from the substrate has occupied the position of the Zn vacancies in the ZnO:Tb(3+) thin films at the higher substrate temperatures (400°C). A blue emission was observed for all the ZnO:Tb(3+) thin films deposited at the different substrate temperatures.

Effects of thermal treatment and depth profiling analysis of solution processed bulk-heterojunction organic photovoltaic cells.

We report the use of solution processed zinc oxide (ZnO) nanoparticles as a buffer layer inserted between the top metal electrode and the photo-active layer in bulk-heterojunction (BHJ) organic solar cell (OSC) devices. The photovoltaic properties were compared for devices annealed before (Device A) or after (Device B) the deposition of the Al top electrode. The post-annealing treatment was shown to improve the power conversion efficiency up to 2.93% and the fill factor (FF) up to 63% under AM1.5 (100mW/cm(2)) illumination. We performed the depth profile/interface analysis and elemental mapping using the time-of-flight secondary ion mass spectrometry (TOF-SIMS). Signals arising from (27)Al, (16)O, (12)C, (32)S, (64)Zn, (28)Si, (120)Sn and (115)In give an indication of successive deposition of Al, ZnO, P3HT:PCBM and PEDOT:PSS layers on ITO coated glass substrates. Furthermore, we discuss the surface imaging and visualize the chemical information on the surface of the devices.