Taming the Distribution of Light in Gate-All-Around Semiconductor Devices.

Optical metrology is ubiquitous, but image-based methods cannot resolve features of dimensions much smaller than the wavelength. However, it has recently been demonstrated that light can be nanofocused into subwavelength semiconducting lines by setting the incident polarization along the direction of these lines. This Letter extends the previous studies to systems with two perpendicular gratings, as found e.g. after replacement gate processing of gate-all-around (GAA) field-effect transistors (FETs). We show that besides the nanofocusing effect, the incident polarization also offers control over which array of lines the light couples into. The interaction of the incident light occurs with the semiconducting lines to which the polarization is parallel with remarkably low interference from the existence of another perpendicular grating. We demonstrate the use of this effect with Raman spectroscopy to simultaneously extract the SiGe volume and the strain in the Si forksheet channels and in the SiGe layers of GAA FETs.

Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces.

The increasing scientific and industry interest in 2D MX2 materials within the field of nanotechnology has made the single crystalline integration of large area van der Waals (vdW) layers on commercial substrates an important topic. The c-plane oriented (3D crystal) sapphire surface is believed to be an interesting substrate candidate for this challenging 2D/3D integration. Despite the many attempts that have been made, the yet incomplete understanding of vdW epitaxy still results in synthetic material that shows a crystallinity far too low compared to natural crystals that can be exfoliated onto commercial substrates. Thanks to its atomic control and in situ analysis possibilities, molecular beam epitaxy (MBE) offers a potential solution and an appropriate method to enable a more in-depth understanding of this peculiar 2D/3D hetero-epitaxy. Here, we report on how various sapphire surface reconstructions, that are obtained by thermal annealing of the as-received substrates, influence the vdW epitaxy of the MBE-grown WSe2 monolayers (MLs). The surface chemistry and the interatomic arrangement of the reconstructed sapphire surfaces are shown to control the preferential in-plane epitaxial alignment of the stoichiometric WSe2 crystals. In addition, it is demonstrated that the reconstructions also affect the in-plane lattice parameter and thus the in-plane strain of the 2D vdW-bonded MLs. Hence, the results obtained in this work shine more light on the peculiar concept of vdW epitaxy, especially relevant for 2D materials integration on large-scale 3D crystal commercial substrates.

Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity.

The rapid cadence of MOSFET scaling is stimulating the development of new technologies and accelerating the introduction of new semiconducting materials as silicon alternative. In this context, 2D materials with a unique layered structure have attracted tremendous interest in recent years, mainly motivated by their ultra-thin body nature and unique optoelectronic and mechanical properties. The development of scalable synthesis techniques is obviously a fundamental step towards the development of a manufacturable technology. Metal-organic chemical vapor deposition has recently been used for the synthesis of large area TMDs, however, an important milestone still needs to be achieved: the ability to precisely control the number of layers and surface uniformity at the nano-to micro-length scale to obtain an atomically flat, self-passivated surface. In this work, we explore various fundamental aspects involved in the chemical vapor deposition process and we provide important insights on the layer-dependence of epitaxial MoS2 film's structural properties. Based on these observations, we propose an original method to achieve a layer-controlled epitaxy of wafer-scale TMDs.

Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films.

B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped diamond, to date there is very limited knowledge of the wear properties of highly B-doped diamond. Therefore, in this work a comprehensive investigation of the wear behavior of highly B-doped diamond is presented. Reciprocating sliding tests are performed on micro- and nanocrystalline diamond (MCD, NCD) films with varying B-doping levels and thicknesses. We demonstrate a linear dependency of the wear rate of the different diamond films with the B-doping level. Specifically, the wear rate increases by a factor of 3 between NCD films with 0.6 and 2.8 at. % B-doping levels. This increase in the wear rate can be linked to a 50% decrease in both hardness and elastic modulus of the highly B-doped NCD films, as determined by nanoindentation measurements. Moreover, we show that fine-grained diamond films are more prone to wear. Particularly, NCD films with a 3× smaller grain size but similar B-doping levels exhibit a double wear rate, indicating the crucial role of the grain size on the diamond film wear behavior. On the other hand, MCD films are the most wear-resistant films due to their larger grains and lower B-doping levels. We propose a graphical scheme of the wear behavior which involves planarization and mechanochemically driven amorphization of the surface to describe the wear mechanism of B-doped diamond films. Finally, the wear behavior of the nucleation surface of NCD films is investigated for the first time. In particular, the nucleation surface is shown to be susceptible to higher wear compared to the growth surface due to its higher grain boundary line density.