Low Temperature Relaxation of Donor Bound Electron Spins in

We measure the spin-lattice relaxation of donor bound electrons in ultrapure, isotopically enriched, phosphorus-doped ^{28}Si:P. The optical pump-probe experiments reveal at low temperatures extremely long spin relaxation times which exceed 20 h. The ^{28}Si:P spin relaxation rate increases linearly with temperature in the regime below 1 K and shows a distinct transition to a T^{9} dependence which dominates the spin relaxation between 2 and 4 K at low magnetic fields. The T^{7} dependence reported for natural silicon is absent. At high magnetic fields, the spin relaxation is dominated by the magnetic field dependent single phonon spin relaxation process. This process is well documented for natural silicon at finite temperatures but the ^{28}Si:P measurements validate additionally that the bosonic phonon distribution leads at very low temperatures to a deviation from the linear temperature dependence of Γ as predicted by theory.

Separating the two polarities of the POLO contacts of an 26.1%-efficient IBC solar cell.

By applying an interdigitated back contacted solar cell concept with poly-Si on oxide passivating contacts an efficiency of 26.1% was achieved recently. In this paper the impact of the implemented initially intrinsic poly-Si region between p-type poly-Si and n-type poly-Si regions is investigated. Two recombination paths are identified: The recombination at the interface between the initially intrinsic poly-Si and the wafer as well as the recombination across the resulting p(i)n diode on the rear side which is aimed to be reduced by introducing an initially intrinsic region. By using test structures, it is demonstrated that the width of the initially intrinsic region ((i) poly-Si region) has a strong influence on the recombination current through the p(i)n diode and that this initially intrinsic region needs to be about 30 µm wide to sufficiently reduce the recombination across the p(i)n diode. Lateral and depth-resolved time of flight secondary ion mass spectrometry analysis shows that the high-temperature annealing step causes a strong lateral inter-diffusion of donor and acceptor atoms into the initially intrinsic region. This diffusion has a positive impact on the passivation quality at the c-Si/SiOx/i poly-Si interface and is thus essential for achieving an independently confirmed efficiency of 26.1% with 30 µm-wide initially intrinsic poly-Si regions.

Towards Bose-Einstein condensation of semiconductor excitons: the biexciton polarization effect.

We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells.

Spin noise spectroscopy in semiconductors.

Spin noise spectroscopy in semiconductors is an optical method that allows nearly perturbation free measurements of the spin dynamics of electrons in thermal equilibrium. The article explains the basic principles of spin noise spectroscopy and introduces an optimized experimental setup which promotes spin noise spectroscopy to an extraordinary sensitive tool. Exemplary measurements on n-doped bulk GaAs yield the temperature dependence of the electron spin relaxation time and the electron Landé g factor and reveal a dependence of the spin relaxation time on the laser probe wavelength. The magnitude and wavelength dependence of the measured spin noise signal compares well to basic calculations.

Spin noise spectroscopy in GaAs.

We observe the noise spectrum of electron spins in bulk GaAs by Faraday-rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron-spin dynamics in semiconductors. We measure exemplarily the electron-spin relaxation time and the electron Landé g factor in -doped GaAs at low temperatures and find good agreement of the measured noise spectrum with a theory based on Poisson distribution probability.

Anomalous spin dephasing in (110) GaAs quantum wells: anisotropy and intersubband effects.

A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As quantum wells grown on a (110) oriented substrate. The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared to spins along [110]. The spin lifetimes of both spin orientations decrease monotonically above temperatures of 80 and 120 K, respectively. The decrease is very surprising for spins along the [110] direction and cannot be explained by the usual Dyakonov-Perel dephasing mechanism. A novel spin dephasing mechanism is put forward that is based on scattering of electrons between different quantum well subbands.

Stereoselective preparation and reactions of configurationally defined dialkylzinc compounds

The reaction of cyclic and open-chain diastereomerically pure secondary organoboranes with diisopropylzinc allows the preparation of secondary dialkylzinc reagents with good to excellent retention of configuration as shown by deuterolysis and CuI- and Pd0-mediated reactions with electrophiles. The importance of a high boron-zinc exchange rate to obtain high diastereoselectivity has been shown. Improvement of the configurational stability and stereomeric purity of the zinc intermediates has been obtained by using mono-isopinocampheylborane ((-)-IpcBH2) providing optically active dialkylzinc compounds (up to 96% ee) with enhanced diastereoselectivities.

Pump geometry for resonant and quasi-resonant optical excitation of microcavity lasers.

A simple new pump geometry for optical excitation of microcavities and vertical-cavity surface-emitting lasers is presented. The technique circumvents the high reflectivity of the cavity stop band by excitation through the substrate at a large angle of incidence. Under these conditions, the reflectivity of the bottom Bragg reflector is small, and optical pumping at any desired photon energy becomes possible. Experimental results for optical excitation with this new geometry are compared with resonant optical pumping through the cavity mode.

Earth-Based Radio Tracking of the Galileo Probe for Jupiter Wind Estimation

Although the Galileo probe was designed to communicate only to the orbiter, the probe radio signal was detected at two Earth-based radio observatories where the signal was a billion times weaker. The measured signal frequency was used to derive a vertical profile of the jovian zonal wind speed. Due to the mission geometry, the Earth-based wind estimates are less sensitive to descent trajectory errors than estimates based on probe-orbiter Doppler measurements. The two estimates of wind profiles agree qualitatively; both show high wind speeds at all depths sampled.