Inhibiting Klein Tunneling in a Graphene p-n Junction without an External Magnetic Field.

We study by first-principles calculations a densely packed island of organic molecules (F_{4}TCNQ) adsorbed on graphene. We find that with electron doping the island naturally forms a p-n junction in the graphene sheet. For example, a doping level of ∼3×10^{13} electrons per cm^{2} results in a p-n junction with an 800 meV electrostatic potential barrier. Unlike in a conventional p-n junction in graphene, in the case of the junction formed by an adsorbed organic molecular island we expect that the Klein tunneling is inhibited, even without an applied external magnetic field. Here Klein tunneling is inhibited by the ferromagnetic order that spontaneously occurs in the molecular island upon doping. We estimate that the magnetic barrier in the graphene sheet is around 10 mT.

Molecular Self-Assembly in a Poorly Screened Environment: F4TCNQ on Graphene/BN.

We report a scanning tunneling microscopy and noncontact atomic force microscopy study of close-packed 2D islands of tetrafluorotetracyanoquinodimethane (F4TCNQ) molecules at the surface of a graphene layer supported by boron nitride. While F4TCNQ molecules are known to form cohesive 3D solids, the intermolecular interactions that are attractive for F4TCNQ in 3D are repulsive in 2D. Our experimental observation of cohesive molecular behavior for F4TCNQ on graphene is thus unexpected. This self-assembly behavior can be explained by a novel solid formation mechanism that occurs when charged molecules are placed in a poorly screened environment. As negatively charged molecules coalesce, the local work function increases, causing electrons to flow into the coalescing molecular island and increase its cohesive binding energy.

Calculation of the specific heat of optimally K-doped BaFe2As2.

The calculated specific heat of optimally K-doped BaFe2As2 in density functional theory is about five times smaller than that found in the experiment. We report that by adjusting the potential on the iron atom to be slightly more repulsive for electrons improves the calculated heat capacity as well as the electronic band structure of Ba0.6K0.4Fe2As2. In addition, structural and magnetic properties are moved in the direction of experimental values. Applying the same correction to the antiferromagnetic state, we find that the electron-phonon coupling is strongly enhanced.