Switchable Chemical-Bond Reorganization for the Stable Charge Trapping in Amorphous Silicon Nitride.

Despite the widespread use of charge-trap flash (CTF) memory, the atomistic mechanism behind the exceptionally stable charge storage at the localized trap sites is still controversial. Herein, by combining first-principles calculations and orbital interaction analysis, a charge-dependent switchable chemical-bond reorganization is elucidated as the underpinning chemistry in the working mechanism of CTF. Especially, positively charged fourfold-coordinated nitrogen (dubbed N+ center), unappreciated until now, is the decisive component of the entire process; once an electron occupies this site, the N+ center disappears by breaking one N─Si bond, simultaneously forming a new Si─Si bond with a nearby Si atom which, in turn, creates fivefold coordinated Si. As a result, the electron is stored in a multi-center orbital belonging to multiple atoms including the newly formed Si─Si bond. It is also observed that hole trapping accompanies the creation of an N+ center by forming a new N─Si bond, which represents the reverse process. To further support and validate this model by means of core-level calculations, it is also shown that an N+ center's 1s core level is 1.0-2.5 eV deeper in energy than those of the threefold coordinated N atoms, in harmony with experimental X-ray photoelectron spectroscopy data.

Hard ferromagnetic van-der-Waals metal (Fe,Co)3GeTe2: a new platform for the study of low-dimensional magnetic quantum criticality.

The widely-studied ferromagnetic van-der-Waals (vdW) metal Fe3GeTe2 has great promise for studies of quantum criticality in the 2D limit, but is limited by a relatively high Curie temperature in excess of 200 K. To help render the quantum critical point achievable in such a system within the reach of practically possible tuning methods, we have grown single crystals of a variant of (Fe,Co)3GeTe2 with useful physical properties for both this purpose and the wider study of low-dimensional magnetism and spin transport. (Fe,Co)3GeTe2 is found through x-ray diffraction and electron microscopy to have an equivalent crystal structure to Fe3GeTe2, with a random distribution of the cobalt dopant sites. It exhibits a sharp ferromagnetic transition at a value below 40 K, a stronger anisotropy and a coercive field ten times larger than that of Fe3GeTe2. The transport properties and specific heat show the electronic properties and strong correlations of Fe3GeTe2 to be near-unchanged in this doped material. We demonstrate that (Fe,Co)3GeTe2 can be cleanly exfoliated down to monolayer thickness. This unprecedented hard metallic vdW ferromagnet is a valuable new addition to the limited range of materials available for the study of 2D magnetism.

Unraveling the Structural and Electronic Properties of Graphene/Ge(110).

The direct growth of graphene on a semiconducting substrate opens a new avenue for future graphene-based applications. Understanding the structural and electronic properties of the graphene on a semiconducting surface is key for realizing such structures; however, these properties are poorly understood thus far. Here, we provide insight into the structural and electronic properties of graphene grown directly on a Ge(110) substrate. Our scanning tunneling microscopy (STM) study reveals that overlaying graphene on Ge(110) promotes the formation of a new Ge surface reconstruction, i.e., a (6 × 2) superstructure, which has been never observed for a bare Ge(110) surface. The electronic properties of the system exhibit the characteristics of both graphene and Ge. The differential conductance (d I/d V) spectrum from a scanning tunneling spectroscopy (STS) study bears a parabolic structure, corresponding to a reduction in the graphene Fermi velocity, exhibiting additional peaks stemming from the p-orbitals of Ge. The density functional theory (DFT) calculations confirm the existence of surface states due to the p-orbitals of Ge.

Flavonoid glycosides from leaves and straw of Oryza sativa and their effects of cytotoxicity on a macrophage cell line and allelopathic on weed germination.

Five new flavonoids namely, 5-hydroxy-6-isoprenyl-7,4'-dimethoxyflavonol-3-O-ß-d-arabinofuranoside (1), 5,7-dihydroxy-4'-methoxyflavone-7-O-ß-d-arabinopyranosyl-2''-n-decan-1'''-oate (2), 3-butanoyl-5,6,8-trihydroxy-7,4'-dimethoxyflavonol--5-O-ß-d-glucopyranoside (3), 7, 4'-dimethoxy-5-hydroxyflavone-5-O-α-d-arabinopyranosyl-(2'' → 1''')-O-α-d-arabinopyranoside (4), and 5,6-dihydroxy-7, 4'-dimethoxyflavone-5-O-α-d-glucopyranoside (5), together with two known compounds, were isolated from the methanol extract of Oryza sativa leaves and straw. Their structures of new compounds were elucidated by 1D and 2D NMR spectral methods, viz: COSY, HMBC and HSQC aided by mass techniques and IR spectroscopy. The cytotoxicity of these compounds (1-7) were assessed by using (RAW 264.7) mouse macrophages cell line, and allelopathic effects of compounds (1-7) on the germination characteristics of barnyardgrass (Echinochloa oryzicola) and pigweed (Chenopodium album L.) were also evaluated. The compounds 1, 6 and 7 showed cytotoxicity and compounds 1-7 exhibited significant inhibitory activity on the seed germination of two weed species.

Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS2.

Despite recent efforts for the development of transition-metal-dichalcogenide-based high-performance thin-film transistors, device performance has not improved much, mainly because of the high contact resistance at the interface between the 2D semiconductor and the metal electrode. Edge contact has been proposed for the fabrication of a high-quality electrical contact; however, the complete electronic properties for the contact resistance have not been elucidated in detail. Using the scanning tunneling microscopy/spectroscopy and scanning transmission electron microscopy techniques, the edge contact, as well as the lateral boundary between the 2D semiconducting layer and the metalized interfacial layer, are investigated, and their electronic properties and the energy band profile across the boundary are shown. The results demonstrate a possible mechanism for the formation of an ohmic contact in homojunctions of the transition-metal dichalcogenides semiconductor-metal layers and suggest a new device scheme utilizing the low-resistance edge contact.

Nanoscale control of phonon excitations in graphene.

Phonons, which are collective excitations in a lattice of atoms or molecules, play a major role in determining various physical properties of condensed matter, such as thermal and electrical conductivities. In particular, phonons in graphene interact strongly with electrons; however, unlike in usual metals, these interactions between phonons and massless Dirac fermions appear to mirror the rather complicated physics of those between light and relativistic electrons. Therefore, a fundamental understanding of the underlying physics through systematic studies of phonon interactions and excitations in graphene is crucial for realising graphene-based devices. In this study, we demonstrate that the local phonon properties of graphene can be controlled at the nanoscale by tuning the interaction strength between graphene and an underlying Pt substrate. Using scanning probe methods, we determine that the reduced interaction due to embedded Ar atoms facilitates electron-phonon excitations, further influencing phonon-assisted inelastic electron tunnelling.