RESUMO
In this study, we demonstrate a viable and promising optical engineering technique enabling the development of high-performance plasmonic organic photovoltaic devices. Laser interference lithography was explored to fabricate metal nanodot (MND) arrays with elaborately controlled dot size as well as periodicity, allowing spectral overlap between the absorption range of the active layers and the surface plasmon band of MND arrays. MND arrays with â¼91 nm dot size and â¼202 nm periodicity embedded in a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hole transport layer remarkably enhanced the average power conversion efficiency (PCE) from 7.52% up to 10.11%, representing one of the highest PCE and degree of enhancement (â¼34.4%) levels compared to the pristine device among plasmonic organic photovoltaics reported to date. The plasmonic enhancement mechanism was investigated by both optical and electrical analyses using finite difference time domain simulation and conductive atomic force microscopy studies.
