Plasmon resonance tuning in metallic nanocavities.

Nanocavities fabricated in a metallic surface have important and technologically useful properties of complete light absorption and strong field enhancement. Here, we demonstrate how a nanometerthick alumina deposition inside such a cavity can be used to gain an exquisite control over the resonance wavelength. This process allows achieving a precise control over the spectral response and is completely reversible allowing many tuning attempts to be made on a single structure until the optimum performance is achieved.

Sub-20 nm laser ablation for lithographic dry development.

Pattern collapse of small or high aspect ratio lines during traditional wet development is a major challenge for miniaturization in nanolithography. Here we report on a new dry process which combines high resolution resist exposure with selective laser ablation to achieve high resolution with high aspect ratios. Using a low power 532 nm laser, we dry develop a normally negative tone methyl acetoxy calix(6)arene in positive tone to reveal sub-20 nm half-pitch features in a ∼100 nm film at aspect ratios unattainable with conventional development with ablation time of 1-2 s per laser pixel (∼600 nm diameter spot). We also demonstrate superior negative tone wet development by combining electron beam exposure with subsequent laser exposure at a non-ablative threshold that requires far less electron beam exposure doses than traditional wet development.

A silicon-based, sequential coat-and-etch process to fabricate nearly perfect substrate surfaces.

For many thin-film applications substrate imperfections such as particles, pits, scratches, and general roughness, can nucleate film defects which can severely detract from the coating's performance. Previously we developed a coat-and-etch process, termed the ion beam thin film planarization process, to planarize substrate particles up to approximately 70 nm in diameter. The process relied on normal incidence etching; however, such a process induces defects nucleated by substrate pits to grow much larger. We have since developed a coat-and-etch process to planarize approximately 70 nm deep by 70 nm wide substrate pits; it relies on etching at an off-normal incidence angle, i.e., an angle of approximately 470 degrees from the substrate normal. However, a disadvantage of this pit smoothing process is that it induces defects nucleated by substrate particles to grow larger. Combining elements from both processes we have been able to develop a silicon-based, coat-and-etch process to successfully planarize approximately 70 nm substrate particles and pits simultaneously to at or below 1 nm in height; this value is important for applications such as extreme ultraviolet lithography (EUVL) masks. The coat-and-etch process has an added ability to significantly reduce high-spatial frequency roughness, rendering a nearly perfect substrate surface.