1.
Phys Rev Lett
; 100(4): 046405, 2008 Feb 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-18352313
RESUMO
We report a detailed scaling analysis of resistivity rho(T,n) measured for several high-mobility 2D electron systems in the vicinity of the 2D metal-insulator transition. We analyzed the data using the two-parameter scaling approach and general scaling ideas. This enables us to determine the critical electron density, two critical indices, and temperature dependence for the separatrix in the self-consistent manner. In addition, we reconstruct the empirical scaling function describing a two-parameter surface which fits well the rho(T,n) data.