1D and 2D coordination polymers with a new rigid chelating linker: diacetylenedisalicylic acid.

Diacetylenedisalicylic acid is a new rigid linker molecule, capable of forming strong chelate bonds with metal cations. Its monosubstituted salts with dimethylamine and sodium form 1D and 2D coordination polymers, whose structures were solved from single crystals, along with the dimethyl ester of diacetylenedisalicylic acid. The structure of the dimethyl ester is characterized by a dense co-facial π-stacking of molecules with a dominance of van der Waals interactions between the stacks. The angle between the stack direction and the butadiyne groups does not meet the Enkelmann criterion for polymerization in a crystal. In contrast to the dimethyl ester, both salts have a rigid framework with channels filled with disordered solvent molecules. Photoluminescence spectra of the acid and its dimethyl ester have been studied. Thermal analysis of the acid confirms its high thermal stability to 286°C. The acid and its dimethyl ester are prone to polymerization on further heating followed by 50-52% mass loss, forming an amorphous carbon residue at 1000°C.

Development of controlled nanosphere lithography technology.

This work is devoted to the development of nanosphere lithography (NSL) technology, which is a low-cost and efficient method to form nanostructures for nanoelectronics, as well as optoelectronic, plasmonic and photovoltaic applications. Creating a nanosphere mask by spin-coating is a promising, but not sufficiently studied method, requiring a large experimental base for different sizes of nanospheres. So, in this work, we investigated the influence of the technological parameters of NSL by spin-coating on the substrate coverage area by a monolayer of nanospheres with a diameter of 300 nm. It was found that the coverage area increases with decreasing spin speed and time, isopropyl and propylene glycol content, and with increasing the content of nanospheres in solution. Moreover, the process of controllably reducing the size of nanospheres in inductively coupled oxygen plasma was studied in detail. It was determined that increasing the oxygen flow rate from 9 to 15 sccm does not change the polystyrene etching rate, whereas changing the high-frequency power from 250 to 500 W increases the etching rate and allows us to control the decreasing diameter with high accuracy. Based on the experimental data, the optimal technological parameters of NSL were selected and the nanosphere mask on Si substrate was created with coverage area of 97.8% and process reproducibility of 98.6%. Subsequently reducing the nanosphere diameter lets us obtain nanoneedles of various sizes, which can be used in field emission cathodes. In this work, the reduction of nanosphere size, silicon etching, and removal of polystyrene residues occurred in unified continuous process of plasma etching without sample unloading to atmosphere.

OES diagnostics as a universal technique to control the Si etching structures profile in ICP.

In this work, we demonstrate the high efficiency of optical emission spectroscopy to estimate the etching profile of silicon structures in SF6/C4F8/O2 plasma. The etching profile is evaluated as a ratio of the emission intensity of the oxygen line (778.1 nm) to the fluorine lines (685.8 nm and 703.9 nm). It was found that for the creation of directional structures with line sizes from 13 to 100 µm and aspect ratio from ≈ 0.15 to ≈ 5 the optimal intensities ratio is in the range of 2-6, and for structures from 400 to 4000 µm with aspect ratio from ≈ 0.03 to ≈ 0.37 it is in the range 1.5-2. Moreover, the influence of the process parameters on the etching rate of silicon, the etching rate of aluminum, the inclination angle of the profile wall of the etched window, the selectivity of silicon etching with respect to aluminum, and the influence on the overetching (Bowing effect) of the structure was investigated.

High-temperature etching of SiC in SF6/O2 inductively coupled plasma.

In this work, we demonstrate an effective way of deep (30 µm depth), highly oriented (90° sidewall angle) structures formation with sub-nanometer surface roughness (Rms = 0.7 nm) in silicon carbide (SiC). These structures were obtained by dry etching in SF6/O2 inductively coupled plasma (ICP) at increased substrate holder temperatures. It was shown that change in the temperature of the substrate holder in the range from 100 to 300 °C leads to a sharp decrease in the root mean square roughness from 153 to 0.7 nm. Along with this, it has been established that the etching rate of SiC also depends on the temperature of the substrate holder and reaches its maximum (1.28 µm/min) at temperatures close to 150 °C. Further temperature increase to 300 °C does not lead to the etching rate rising. The comparison of the results of the thermally stimulated process and the etching with a water-cooled substrate holder (15 °C) is carried out. Plasma optical emission spectroscopy was carried out at different temperatures of the substrate holder.