Functionalized Multiwalled Carbon Nanotubes for Highly Stable Room Temperature and Humidity-Tolerant Triethylamine Sensing.

Triethylamine (TEA) poses a significant threat to our health and is extremely difficult to detect at the parts-per-billion (ppb) level at room temperature. Carbon nanotubes (CNTs) are versatile materials used in chemiresistive vapor sensing. However, achieving high sensitivity and selectivity with a low detection limit remains a challenge for pristine CNTs, hindering their widespread commercial application. To address these issues, we propose functionalized multiwalled CNTs (MWCNTs) with carboxylic acid (COOH)-based sensing channels for ultrasensitive TEA detection under ambient conditions. Advanced structural analyses confirmed the necessary modification of MWCNTs after functionalization. The sensor exhibited excellent sensitivity to TEA in air, with a superior noise-free signal (10 ppb), an extremely low limit of detection (LOD ≈ 0.8 ppb), excellent repeatability, and long-term stability under ambient conditions. Moreover, the response values became more stable, demonstrating excellent humidity resistance (40-80% RH). Notably, the functionalized MWCNT sensor exhibited improved response and recovery kinetics (200 and 400 s) to 10 ppm of TEA compared to the pristine MWCNT sensor (400 and 1300 s), and the selectivity coefficient for TEA gas was improved by approximately three times against various interferants, including ammonia, formaldehyde, nitrogen dioxide, and carbon monoxide. The remarkable improvements in TEA detection were mainly associated with the large specific surface area, abundant active sites, adsorbed oxygen, and other defects. The sensing mechanism was thoroughly explained by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and gas chromatography-mass spectrometry (GC-MS). This study provides a new platform for CNT-based chemiresistive sensors with high selectivity, low detection limits, and enhanced precision with universal potential for applications in food safety and environmental monitoring.

Synthesis of Au/SnO2 nanostructures allowing process variable control.

Theoretical advances in science are inherently time-consuming to realise in engineering, since their practical application is hindered by the inability to follow the theoretical essence. Herein, we propose a new method to freely control the time, cost, and process variables in the fabrication of a hybrid featuring Au nanoparticles on a pre-formed SnO2 nanostructure. The above advantages, which were divided into six categories, are proven to be superior to those achieved elsewhere, and the obtained results are found to be applicable to the synthesis and functionalisation of other nanostructures. Furthermore, the reduction of the time-gap between science and engineering is expected to promote the practical applications of numerous scientific theories.

Fast Semiconductor-Metal Bidirectional Transition by Flame Chemical Vapor Deposition.

A simple yet powerful flame chemical vapor deposition technique is proposed that allows free control of the surface morphology, microstructure, and composition of existing materials with regard to various functionalities within a short process time (in seconds) at room temperature and atmospheric pressure as per the requirement. Since the heat energy is directly transferred to the material surface, the redox periodically converges to the energy dynamic equilibrium depending on the energy injection time; therefore, bidirectional transition between the semiconductor/metal is optionally available. To demonstrate this, a variety of Sn-based particles were created on preformed SnO2 nanowires, and this has been interpreted as a new mechanism for the response and response times of gas-sensing, which are representative indicators of the most surface-sensitive applications and show one-to-one correspondence between theoretical and experimental results. The detailed technologies derived herein are clearly influential in both research and industry.

New type of doping effect via metallization of surface reduction in SnO2.

The use of conventional doping methods requires consideration of not only the energy connection with the base material but also the limits of the type and doping range of the dopant. The scope of the physico-chemical change must be determined from the properties of the base material, and when this limit is exceeded, a large energy barrier must be formed between the base material and the dopant as in a heterojunction. Thus, starting from a different viewpoint, we introduce a so-called metallization of surface reduction method, which easily overcomes the disadvantages of existing methods while having the effect of doping the base material. Such new synthetic techniques enable sequential energy arrangements-gradients from the surface to the centre of the material-so that free energy transfer effects can be obtained as per the energies in the semiconducting band, eliminating the energy discontinuity of the heterojunction.

Porous Si nanowires for highly selective room-temperature NO2 gas sensing.

We report the room-temperature sensing characteristics of Si nanowires (NWs) fabricated from p-Si wafers by a metal-assisted chemical etching method, which is a facile and low-cost method. X-ray diffraction was used to the the study crystallinity and phase formation of Si NWs, and product morphology was examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After confirmation of Si NW formation via the SEM and TEM micrographs, sensing tests were carried out at room temperature, and it was found that the Si NW sensor prepared from Si wafers with a resistivity of 0.001-0.003 Ω.cm had the highest response to NO2 gas (Rg/Ra = 1.86 for 50 ppm NO2), with a fast response (15 s) and recovery (30 s) time. Furthermore, the sensor responses to SO2, toluene, benzene, H2, and ethanol were nearly negligible, demonstrating the excellent selectivity to NO2 gas. The gas-sensing mechanism is discussed in detail. The present sensor can operate at room temperature, and is compatible with the microelectronic fabrication process, demonstrating its promise for next-generation Si-based electronics fused with functional chemical sensors.