Green edge emitting lasers with porous GaN cladding.

GaN lasers with green emission wavelength at λ = 510 nm have been fabricated using novel nano-porous GaN cladding under pulsed electrical injection. The low slope efficiency of 0.13 W/A and high threshold current density of 14 kA/cm2 are related to a combination of poor injection efficiency and high loss, analyzed by the independent characterization methods of variable stripe length and segmented contacts. Continuous wave operation showed narrowed spectra and augmented spontaneous emission.

Nano-porous GaN cladding and scattering loss in edge emitting laser diodes.

We report continuous wave operation of electrically injected InGaN laser diodes using nano-porous GaN n-side cladding with 33% porosity. At 454 nm emission wavelength, the pulsed injection slope efficiency is 0.24 W/A with a high loss of 82 cm-1. The considerable 60 cm-1 of excess loss of the nano-porous clad lasers is attributed to scattering at pores in unintentionally 3% porosified layers, supported by numerical modeling. Simulations comparing porous GaN cladding to AlInN cladding for lasers operating at 589 nm indicate that the porous cladding provides similar internal loss and lower thermal impedance.

Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition.

High performance InGaN micro-size light-emitting diodes (µLEDs) with epitaxial tunnel junctions (TJs) were successfully demonstrated using selective area growth (SAG) by metalorganic chemical vapor deposition (MOCVD). Patterned n + GaN/n-GaN layers with small holes were grown on top of standard InGaN blue LEDs to form TJs using SAG. TJ µLEDs with squared mesa ranging from 10×10 to 100×100 µm2 were fabricated. The forward voltage (Vf) in the reference TJ µLEDs without SAG is very high and decreases linearly from 4.6 to 3.7 V at 20 A/cm2 with reduction in area from 10000 to 100 µm2, which is caused by the lateral out diffusion of hydrogen through sidewall. By contrast, the Vf at 20 A/cm2 in the TJ µLEDs utilizing SAG is significantly reduced to be 3.24 to 3.31 V. Moreover, the Vf in the SAG TJ µLEDs is independent on sizes, suggesting that the hydrogen is effectively removed through the holes on top of the p-GaN surface by SAG. The output power of SAG TJ µLEDs is ∼10% higher than the common µLEDs with indium tin oxide (ITO) contact.

Color-tuned and transparent colloidal quantum dot solar cells via optimized multilayer interference.

Colloidal quantum dots (CQDs), are a promising candidate material for realizing colored and semitransparent solar cells, due to their band gap tunability, near infrared responsivity and solution-based processing flexibility. CQD solar cells are typically comprised of several optically thin active and electrode layers that are optimized for their electrical properties; however, their spectral tunability beyond the absorption onset of the CQD layer itself has been relatively unexplored. In this study, we design, optimize and fabricate multicolored and transparent CQD devices by means of thin film interference engineering. We develop an optimization algorithm to produce devices with controlled color characteristics. We quantify the tradeoffs between attainable color or transparency and available photocurrent, calculate the effects of non-ideal interference patterns on apparent device color, and apply our optimization method to tandem solar cell design. Experimentally, we fabricate blue, green, yellow, red and semitransparent devices and achieve photocurrents ranging from 10 to 15.2 mA/cm2 for the colored devices. We demonstrate semitransparent devices with average visible transparencies ranging from 27% to 32%, which match our design simulation results. We discuss how our optimization method provides a general platform for custom-design of optoelectronic devices with arbitrary spectral profiles.