Real-time structural dynamics of the ultrafast solvation process around photo-excited aqueous halides.

This work investigates and describes the structural dynamics taking place following charge-transfer-to-solvent photo-abstraction of electrons from I- and Br- ions in aqueous solution following single- and 2-photon excitation at 202 nm and 400 nm, respectively. A Time-Resolved X-ray Solution Scattering (TR-XSS) approach with direct sensitivity to the structure of the surrounding solvent as the water molecules adopt a new equilibrium configuration following the electron-abstraction process is utilized to investigate the structural dynamics of solvent shell expansion and restructuring in real-time. The structural sensitivity of the scattering data enables a quantitative evaluation of competing models for the interaction between the nascent neutral species and surrounding water molecules. Taking the I0-O distance as the reaction coordinate, we find that the structural reorganization is delayed by 0.1 ps with respect to the photoexcitation and completes on a time scale of 0.5-1 ps. On longer time scales we determine from the evolution of the TR-XSS difference signal that I0: e- recombination takes place on two distinct time scales of ∼20 ps and 100 s of picoseconds. These dynamics are well captured by a simple model of diffusive evolution of the initial photo-abstracted electron population where the charge-transfer-to-solvent process gives rise to a broad distribution of electron ejection distances, a significant fraction of which are in the close vicinity of the nascent halogen atoms and recombine on short time scales.

Alteration of Electronic Band Structure via a Metal-Semiconductor Interfacial Effect Enables High Faradaic Efficiency for Electrochemical Nitrogen Fixation.

The interface engineering strategy has been an emerging field in terms of material improvisation that not only alters the electronic band structure of a material but also induces beneficial effects on electrochemical performances. Particularly, it is of immense importance for the environmentally benign electrochemical nitrogen reduction reaction (NRR), which is potentially impeded by the competing hydrogen evolution reaction (HER). The main problem lies in the attainment of the desired current density at a negotiable potential where the NRR would dominate over the HER, which in turn hampers the Faradaic efficiency for the NRR. To circumvent this issue, catalyst development becomes necessary, which would display a weak affinity for H-adsorption suppressing the HER at the catalyst surface. Herein, we have adopted the interfacial engineering strategy to synthesize our electrocatalyst NPG@SnS2, which not only suppressed the HER on the active site but yielded 49.3% F.E. for the NRR. Extensive experimental work and DFT calculations regarded that due to the charge redistribution, the Mott-Schottky effect, and the band bending of SnS2 across the contact layer at the interface of NPG, the d-band center for the surface Sn atoms in NPG@SnS2 lowered, which resulted in favored adsorption of N2 on the Sn active site. This phenomenon was driven even forward by the upshift of the Fermi level, and eventually, a decrease was seen in the work function of the heterostructure that increased the conductivity of the material as compared to pristine SnS2. This strategy thus provides a field to methodically suppress the HER in the realm of improving the Faradaic efficiency for the NRR.

Soft Phonon Modes Leading to Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe.

Crystalline solids with intrinsically low lattice thermal conductivity (κL ) are crucial to realizing high-performance thermoelectric (TE) materials. Herein, we show an ultralow κL of 0.35 Wm-1 K-1 in AgCuTe, which has a remarkable TE figure-of-merit, zT of 1.6 at 670 K when alloyed with 10 mol % Se. First-principles DFT calculation reveals several soft phonon modes in its room-temperature hexagonal phase, which are also evident from low-temperature heat-capacity measurement. These phonon modes, dominated by Ag vibrations, soften further with temperature giving a dynamic cation disorder and driving the superionic transition. Intrinsic factors cause an ultralow κL in the room-temperature hexagonal phase, while the dynamic disorder of Ag/Cu cations leads to reduced phonon frequencies and mean free paths in the high-temperature rocksalt phase. Despite the cation disorder at elevated temperatures, the crystalline conduits of the rigid anion sublattice give a high power factor.

Crystal Structure and Band Gap Engineering in Polyoxometalate-Based Inorganic-Organic Hybrids.

We have demonstrated engineering of the electronic band gap of the hybrid materials based on POMs (polyoxometalates), by controlling its structural complexity through variation in the conditions of synthesis. The pH- and temperature-dependent studies give a clear insight into how these experimental factors affect the overall hybrid structure and its properties. Our structural manipulations have been successful in effectively tuning the optical band gap and electronic band structure of this kind of hybrids, which can find many applications in the field of photovoltaic and semiconducting devices. We have also addressed a common crystallographic disorder observed in Keggin-ion (one type of heteropolyoxometalate [POMs])-based hybrid materials. Through a combination of crystallographic, spectroscopic, and theoretical analysis of four new POM-based hybrids synthesized with tactically varied reaction conditions, we trace the origin and nature of the disorder associated with it and the subtle local structural coordination involved in its core picture. While the crystallography yields a centrosymmetric structure with planar coordination of Si, our analysis with XPS, IR, and Raman spectroscopy reveals a tetrahedral coordination with broken inversion symmetry, corroborated by first-principles calculations.

Effect of Nitrogen and Fluorine Co-substitution on the Structure and Magnetic Properties of Cr2 O3.

First-principles density functional calculations were carried out to determine the structure as well as electronic and magnetic properties of N and F co-substituted Cr2 O3 . The formation of strong CrN bonds upon substitution of oxygen with nitrogen leads to large distortions in the local structure and changes in magnetic moments, which are partly compensated by co-substitution with fluorine. The effects of spin-orbit coupling are relatively weak, but its combination with local structural distortions gives rise to canting of spins and an overall magnetic moment in N, F co-substituted Cr2 O3 . Experimentally, we observe spin canting in N, F co-substituted Cr2 O3 with considerable enhancement in the coercive field at low temperatures.

Temperature dependent reversible p-n-p type conduction switching with colossal change in thermopower of semiconducting AgCuS.

Semiconductors have been fundamental to various devices that are typically operated with electric field, such as transistors, memories, sensors, and resistive switches. There is growing interest in the development of novel inorganic materials for use in transistors and semiconductor switches, which can be operated with a temperature gradient. Here, we show that a crystalline semiconducting noble metal sulfide, AgCuS, exhibits a sharp temperature dependent reversible p-n-p type conduction switching, along with a colossal change in the thermopower (ΔS of ~1757 µV K(-1)) at the superionic phase transition (T of ~364 K). In addition, its thermal conductivity is ultralow in 300-550 K range giving AgCuS the ability to maintain temperature gradients. We have developed fundamental understanding of the phase transition and p-n-p type conduction switching in AgCuS through temperature dependent synchrotron powder X-ray diffraction, heat capacity, Raman spectroscopy, and positron annihilation spectroscopy measurements. Using first-principles calculations, we show that this rare combination of properties originates from an effective decoupling of electrical conduction and phonon transport associated with electronic states of the rigid sulfur sublattice and soft vibrations of the disordered cation sublattices, respectively. Temperature dependent p-n-p type conduction switching makes AgCuS an ideal material for diode or transistor devices that operate reversibly on temperature or voltage changes near room temperature.

Effect of co-substitution of nitrogen and fluorine in BaTiO3 on ferroelectricity and other properties.

BaTiO3, with both nitrogen and fluorine substituted for oxygen, has been prepared and the properties of the doped material with the composition BaTiO2:8N0:1F0:1 have been studied. The color of the sample changes to light green on doping, accompanying a broad visible absorption band with its edge at 2.5 eV. The first-order ferroelectric transition changes to a broad transition on doping along with a decrease in the dielectric constant. We have examined the local structure, electronic structure and polar lattice dynamical properties of N and F co-substituted BaTiO3 using first-principles density functional theory-based calculations and derived the mechanism of the diffuse ferroelectric transition observed here with a broad peak in the temperature-dependent dielectric response. The calculated Born charges clearly reveal a strong disparity in the interaction of N, O and F with Ti: N being the most ferro-active, with a highly anomalous charge, and F being the least active, with an almost nominal charge. This originates from an electronic structure in which the top-most valence band is constituted of the 2p states of N, while the electronic states of F lie deep in the energy band, resulting in a local structure with short covalent Ti­N and long ionic Ti­F bonds. Disorder in these hetero ferro-active anions leads to a relaxor-like diffuse phase transition and a reduction in polarization. Calculations confirm the reduction of 0.65 eV in the bandgap of BaTiO3, which changes from indirect to direct type.