1.
Nano Lett
; 14(3): 1643-50, 2014 Mar 12.
Artigo
em Inglês
| MEDLINE
| ID: mdl-24502770
RESUMO
We report the growth of InAs(1-x)Sb(x) nanowires (0 ≤ x ≤ 0.15) grown by catalyst-free molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of stacking fault density in the InAs(1-x)Sb(x) nanowire crystal structure with increasing antimony content. This decrease leads to a significant increase in the field-effect mobility, this being more than three times greater at room temperature for InAs0.85Sb0.15 nanowires than InAs nanowires.