Sharpness of the Berezinskii-Kosterlitz-Thouless Transition in Disordered NbN Films.

We present a comprehensive investigation of the Berezinskii-Kosterlitz-Thouless transition in ultrathin strongly disordered NbN films. Measurements of resistance, current-voltage characteristics, and kinetic inductance on the very same device reveal a consistent picture of a sharp unbinding transition of vortex-antivortex pairs that fit standard renormalization group theory without extra assumptions in terms of inhomogeneity. Our experiments demonstrate that the previously observed broadening of the transition is not an intrinsic feature of strongly disordered superconductors and provide a clean starting point for the study of dynamical effects at the Berezinskii-Kosterlitz-Thouless transition.

Supercurrent diode effect and magnetochiral anisotropy in few-layer NbSe2.

Nonreciprocal transport refers to charge transfer processes that are sensitive to the bias polarity. Until recently, nonreciprocal transport was studied only in dissipative systems, where the nonreciprocal quantity is the resistance. Recent experiments have, however, demonstrated nonreciprocal supercurrent leading to the observation of a supercurrent diode effect in Rashba superconductors. Here we report on a supercurrent diode effect in NbSe2 constrictions obtained by patterning NbSe2 flakes with both even and odd layer number. The observed rectification is a consequence of the valley-Zeeman spin-orbit interaction. We demonstrate a rectification efficiency as large as 60%, considerably larger than the efficiency of devices based on Rashba superconductors. In agreement with recent theory for superconducting transition metal dichalcogenides, we show that the effect is driven by the out-of-plane component of the magnetic field. Remarkably, we find that the effect becomes field-asymmetric in the presence of an additional in-plane field component transverse to the current direction. Supercurrent diodes offer a further degree of freedom in designing superconducting quantum electronics with the high degree of integrability offered by van der Waals materials.

Supercurrent rectification and magnetochiral effects in symmetric Josephson junctions.

Transport is non-reciprocal when not only the sign, but also the absolute value of the current depends on the polarity of the applied voltage. It requires simultaneously broken inversion and time-reversal symmetries, for example, by an interplay of spin-orbit coupling and magnetic field. Hitherto, observation of nonreciprocity was tied to resistivity, and dissipationless non-reciprocal circuit elements were elusive. Here we engineer fully superconducting non-reciprocal devices based on highly transparent Josephson junctions fabricated on InAs quantum wells. We demonstrate supercurrent rectification far below the transition temperature. By measuring Josephson inductance, we can link the non-reciprocal supercurrent to an asymmetry of the current-phase relation, and directly derive the supercurrent magnetochiral anisotropy coefficient. A semiquantitative model explains well the main features of our experimental data. Non-reciprocal Josephson junctions have the potential to become for superconducting circuits what pn junctions are for traditional electronics, enabling new non-dissipative circuit elements.

Supercurrent and Phase Slips in a Ballistic Carbon Nanotube Bundle Embedded into a van der Waals Heterostructure.

We demonstrate long-range superconducting correlations in a several-micrometers-long carbon nanotube bundle encapsulated in a van der Waals stack between hBN and NbSe2. We show that a substantial supercurrent flows through the nanotube section beneath the NbSe2 crystal as well as through the 2 µm long section not in contact with it. The large in-plane critical magnetic field of this supercurrent is an indication that even inside the carbon nanotube Cooper pairs enjoy a degree of paramagnetic protection typical of the parent Ising superconductor. As expected for superconductors of nanoscopic cross section, the current-induced breakdown of superconductivity is characterized by resistance steps due to the nucleation of phase slip centers. All elements of our hybrid device are active building blocks of several recently proposed setups for realization of Majorana fermions in carbon nanotubes.

Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe2.

Monolayer transition-metal dichalcogenides (TMDCs) show a wealth of exciton physics. Here, we report the existence of a new excitonic species, the high-lying exciton (HX), in single-layer WSe2 with an energy of ~3.4 eV, almost twice the band-edge A-exciton energy, with a linewidth as narrow as 5.8 meV. The HX is populated through momentum-selective optical excitation in the K-valleys and is identified in upconverted photoluminescence (UPL) in the UV spectral region. Strong electron-phonon coupling results in a cascaded phonon progression with equidistant peaks in the luminescence spectrum, resolvable to ninth order. Ab initio GW-BSE calculations with full electron-hole correlations explain HX formation and unmask the admixture of upper conduction-band states to this complex many-body excitation. These calculations suggest that the HX is comprised of electrons of negative mass. The coincidence of such high-lying excitonic species at around twice the energy of band-edge excitons rationalizes the excitonic quantum-interference phenomenon recently discovered in optical second-harmonic generation (SHG) and explains the efficient Auger-like annihilation of band-edge excitons.

Josephson Inductance as a Probe for Highly Ballistic Semiconductor-Superconductor Weak Links.

We present simultaneous measurements of Josephson inductance and dc transport characteristics of ballistic Josephson junctions based upon an epitaxial Al-InAs heterostructure. The Josephson inductance at finite current bias directly reveals the current-phase relation. The proximity-induced gap, the critical current and the average value of the transparency τ[over ¯] are extracted without need for phase bias, demonstrating, e.g., a near-unity value of τ[over ¯]=0.94. Our method allows us to probe the devices deeply in the nondissipative regime, where ordinary transport measurements are featureless. In perpendicular magnetic field the junctions show a nearly perfect Fraunhofer pattern of the critical current, which is insensitive to the value of τ[over ¯]. In contrast, the signature of supercurrent interference in the inductance turns out to be extremely sensitive to τ[over ¯].

Coherent population trapping by dark state formation in a carbon nanotube quantum dot.

Illumination of atoms by resonant lasers can pump electrons into a coherent superposition of hyperfine levels which can no longer absorb the light. Such superposition is known as a dark state, because fluorescent light emission is then suppressed. Here we report an all-electric analogue of this destructive interference effect in a carbon nanotube quantum dot. The dark states are a coherent superposition of valley (angular momentum) states which are decoupled from either the drain or the source leads. Their emergence is visible in asymmetric current-voltage characteristics, with missing current steps and current suppression which depend on the polarity of the applied source-drain bias. Our results demonstrate coherent-population trapping by all-electric means in an artificial atom.

Exciton Diffusion and Halo Effects in Monolayer Semiconductors.

We directly monitor exciton propagation in freestanding and SiO_{2}-supported WS_{2} monolayers through spatially and time-resolved microphotoluminescence under ambient conditions. We find a highly nonlinear behavior with characteristic, qualitative changes in the spatial profiles of the exciton emission and an effective diffusion coefficient increasing from 0.3 to more than 30 cm^{2}/s, depending on the injected exciton density. Solving the diffusion equation while accounting for Auger recombination allows us to identify and quantitatively understand the main origin of the increase in the observed diffusion coefficient. At elevated excitation densities, the initial Gaussian distribution of the excitons evolves into long-lived halo shapes with µm-scale diameter, indicating additional memory effects in the exciton dynamics.

Giant magnetic splitting inducing near-unity valley polarization in van der Waals heterostructures.

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for information processing stimulated concerted research activities towards the concept of valleytronics, maintaining control over spin-valley polarization proved challenging in individual monolayers. A promising alternative route explores type II band alignment in artificial van der Waals heterostructures. The resulting formation of interlayer excitons combines the advantages of long carrier lifetimes and spin-valley locking. Here, we demonstrate artificial design of a two-dimensional heterostructure enabling intervalley transitions that are not accessible in monolayer systems. The resulting giant effective g factor of -15 for interlayer excitons induces near-unity valley polarization via valley-selective energetic splitting in high magnetic fields, even after nonselective excitation. Our results highlight the potential to deterministically engineer novel valley properties in van der Waals heterostructures using crystallographic alignment.

Imaging fractional incompressible stripes in integer quantum Hall systems.

Transport experiments provide conflicting evidence on the possible existence of fractional order within integer quantum Hall systems. In fact, integer edge states sometimes behave as monolithic objects with no inner structure, while other experiments clearly highlight the role of fractional substructures. Recently developed low-temperature scanning probe techniques offer today an opportunity for a deeper-than-ever investigation of spatial features of such edge systems. Here we use scanning-gate microscopy and demonstrate that fractional features were unambiguously observed in every integer quantum Hall constriction studied. We present also an experimental estimate of the width of the fractional incompressible stripes corresponding to filling factors 1/3, 2/5, 3/5, and 2/3. Our results compare well with predictions of the edge-reconstruction theory.

Probing the gate--voltage-dependent surface potential of individual InAs nanowires using random telegraph signals.

We report a novel method for probing the gate-voltage dependence of the surface potential of individual semiconductor nanowires. The statistics of electronic occupation of a single defect on the surface of the nanowire, determined from a random telegraph signal, is used as a measure for the local potential. The method is demonstrated for the case of one or two switching defects in indium arsenide (InAs) nanowire field effect transistors at temperatures T=25-77 K. Comparison with a self-consistent model shows that surface potential variation is retarded in the conducting regime due to screening by surface states with density Dss≈10(12) cm(-2) eV(-1). Temperature-dependent dynamics of electron capture and emission producing the random telegraph signals are also analyzed, and multiphonon emission is identified as the process responsible for capture and emission of electrons from the surface traps. Two defects studied in detail had capture activation energies of EB≈50 meV and EB≈110 meV and cross sections of σ∞≈3×10(-19) cm2 and σ∞≈2×10(-17) cm2, respectively. A lattice relaxation energy of Sℏω=187±15 meV was found for the first defect.

Tuning nonlinear charge transport between integer and fractional quantum Hall states.

Controllable point junctions between different quantum Hall phases are a necessary building block for the development of mesoscopic circuits based on fractionally charged quasiparticles. We demonstrate how particle-hole duality can be exploited to realize such point-contact junctions. We show an implementation for the case of two quantum Hall liquids at filling factors nu=1 and nu*