RESUMO
Printed electronics employing solution-processed materials is considered to be the key to realizing low-cost large-area electronic systems, but the performance of printed transistors is generally inadequate for most of the intended applications due to limited performance of printable semiconductor materials. We propose an alternative approach for a printed switch, where the use of semiconductors can be avoided by building mechanical switches with printed metal nanoparticle-based inks. In this work, we detail the first demonstration of inkjet-printed microelectromechanical (MEM) switches with abrupt switching characteristics, very low on-state resistance (~10 Ω), and very low off-state leakage. The devices are fabricated using a novel process scheme to build three-dimensional cantilever structures from solution-processed metallic nanoparticles and sacrificial polymer layers. These printed MEM switches thus represent a uniquely attractive path for realizing printed electronics.
RESUMO
This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and /(on) //(off) of 10(4) ~10(5) .
Assuntos
Compostos de Estanho/química , Transistores Eletrônicos , Zircônio/química , Eletricidade , Géis , Tamanho da PartículaRESUMO
A simple maskless photolithography system employing an optical microscope, a motorized stage and a beam blanker is proposed. Based on a pattern design, the motorized stage shifts a resist-coated substrate exposed by a focused beam under a microscope. Microscale patterns are easily defined on a single nanowire without using a mask validating the application applying to the research requiring frequent changes or free-style designs in microscale test patterns.
