Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires.

We report improved conductance by reducing the work function via incorporation of hydrogen into VO2 nanowires. The VO2 nanowires were prepared using the chemical vapor deposition method with V2O5 powder on silicon substrates at 850 °C. Hydrogenation was carried out using the high-pressure hydrogenation method. Raman spectroscopy confirmed that the incorporated hydrogen atoms resulted in a change in the lattice constant of the VO2 nanowires (NWs). To quantitatively measure the work function of the nanowires, Kelvin probe force microscopy (KPFM) was employed at ambient conditions. We found that the work function decreased with increasing H2 pressure, which also resulted in increased conductance. This is associated with hydrogen diffused into the VO2 that acts as a donor to elevate the Fermi level, which was also confirmed by KPFM. From these results, tuning of the reversible electrical properties of VO2 NWs, including the conductance and work function, can be achieved by incorporating hydrogen at relatively moderate temperatures.

Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection.

We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V- 1 s- 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7 V.

Highly sensitive and flexible strain sensors based on patterned ITO nanoparticle channels.

We demonstrate a highly sensitive and flexible bending strain sensor using tin-doped indium oxide (ITO) nanoparticles (NPs) assembled in line patterns on flexible substrates. By utilizing transparent ITO NPs without any surface modifications, we could produce strain sensors with adjustable gauge factors and optical transparency. We were able to control the dimensional and electrical properties of the sensors, such as channel height and resistance, by controlling the NP assembly speed. Furthermore, we were able to generate controlled gauge factor with values ranging from 18 to 157, which are higher than previous cases using metallic Cr NPs and Au NPs. The alignment of the ITO NPs in parallel lines resulted in low crosstalk between the transverse and longitudinal bending directions. Finally, our sensor showed high optical transmittance, up to ∼93% at 500 nm wavelength, which is desirable for flexible electronic applications.

Work function engineering of SnO single crystal microplates with thermal annealing.

We synthesized black SnO single-crystal microplates via a sonochemical process and engineered the work function of the SnO microplates using thermal treatments. The as-synthesized SnO microplates have a wide (001) plane, as is clearly evident from TEM images and diffraction patterns. Surface potential measurements on the SnO microplates show that the work function changes as the annealing temperature increases. The TEM and XAS results after thermal treatments imply that the micro-sized SnO(001) single-crystals are stable up to about 400 °C in air, after which the surface starts to become locally oxidized. Consequently, the long-range ordering and lattice parameter of the SnO(001) single crystals started to change to make polycrystalline SnO2 at about 600 °C. These results demonstrate the ability to tune the work function of the microplates and suggest an intriguing way to engineer the electrical properties of nanostructures.

Flexion bonding transfer of multilayered graphene as a top electrode in transparent organic light-emitting diodes.

Graphene has attracted considerable attention as a next-generation transparent conducting electrode, because of its high electrical conductivity and optical transparency. Various optoelectronic devices comprising graphene as a bottom electrode, such as organic light-emitting diodes (OLEDs), organic photovoltaics, quantum-dot LEDs, and light-emitting electrochemical cells, have recently been reported. However, performance of optoelectronic devices using graphene as top electrodes is limited, because the lamination process through which graphene is positioned as the top layer of these conventional OLEDs is a lack of control in the surface roughness, the gapless contact, and the flexion bonding between graphene and organic layer of the device. Here, a multilayered graphene (MLG) as a top electrode is successfully implanted, via dry bonding, onto the top organic layer of transparent OLED (TOLED) with flexion patterns. The performance of the TOLED with MLG electrode is comparable to that of a conventional TOLED with a semi-transparent thin-Ag top electrode, because the MLG electrode makes a contact with the TOLED with no residue. In addition, we successfully fabricate a large-size transparent segment panel using the developed MLG electrode. Therefore, we believe that the flexion bonding technology presented in this work is applicable to various optoelectronic devices.

Giant enhancement of the Raman response due to one-dimensional ZnO nanostructures.

We observed giant enhancement of the Raman intensity from 4-Mpy molecules adsorbed on semiconducting one-dimensional ZnO nanostructures, nanowires and nanocones, without involving any noble metals. Interestingly, the enhancement is strongly dependent on the geometry of ZnO nanostructures and can mainly be explained by the cavity-like structural resonance of the electric field. Our results can be applied to systematically create hot spots for Raman signal enhancement using one-dimensional semiconducting nanomaterials.

Surface plasmon-driven hot electron flow probed with metal-semiconductor nanodiodes.

A continuous flow of hot electrons that are not at thermal equilibrium with the surrounding metal atoms is generated by the absorption of photons. Here we show that hot electron flow generated on a gold thin film by photon absorption (or internal photoemission) is amplified by localized surface plasmon resonance. This was achieved by direct measurement of photocurrent on a chemically modified gold thin film of metal-semiconductor (TiO(2)) Schottky diodes. The short-circuit photocurrent obtained with low-energy photons is consistent with Fowler's law, confirming the presence of hot electron flows. The morphology of the metal thin film was modified to a connected gold island structure after heating such that it exhibits surface plasmon. Photocurrent and optical measurements on the connected island structures revealed the presence of a localized surface plasmon at 550 ± 20 nm. The results indicate an intrinsic correlation between the hot electron flow generated by internal photoemission and localized surface plasmon resonance.

Highly sensitive hydrogen detection of catalyst-free ZnO nanorod networks suspended by lithography-assisted growth.

We have successfully demonstrated a ZnO nanorod-based 3D nanostructure to show a high sensitivity and very fast response/recovery to hydrogen gas. ZnO nanorods have been synthesized selectively over the pre-defined area at relatively low temperature using a simple self-catalytic solution process assisted by a lithographic method. The conductance of the ZnO nanorod device varies significantly as the concentration of the hydrogen is changed without any additive metal catalyst, revealing a high sensitivity to hydrogen gas. Its superior performance can be explained by the porous structure of its three-dimensional network and the enhanced surface reaction of the hydrogen molecules with the oxygen defects resulting from a high surface-to-volume ratio. It was found that the change of conductance follows a power law depending on the hydrogen concentration. A Langmuir isotherm following an ideal power law and a cross-over behavior of the activation energy with respect to hydrogen concentration were observed. This is a very novel and intriguing phenomenon on nanostructured materials, which suggests competitive surface reactions in ZnO nanorod gas sensors.

Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors.

We report a single-step, solution-based synthesis even at room temperature utilizing a facile sonochemical method to fabricate ZnO nanocrystalline films consisting of well-aligned nanorods.

Rose bengal dye on thiol-terminated bilayer for molecular devices.

Recently, it has become increasingly important to control molecular layers, especially with regard to the formation of bilayers, in order to avoid electrical shorts in molecular electronics. In this paper, we report on the characterization of an in situ thiol-terminated bilayer that is formed by hydrogen bonding between the amine group of an aminoalkanethiol monolayer on a gold surface and the free amine group of aminoalkanethiolates in a bulk solution. We also report on the use of a rose bengal (RB) monolayer on a thiol-terminated bilayer for the purpose of application in a molecular memory device. Using surface-sensitive techniques such as grazing angle Fourier transform infrared (FT-IR) spectroscopy, quartz crystal microbalance (QCM) measurement, ellipsometry, X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV), we characterized a thiol-terminated bilayer (TUA-AUT) and an RB functionalized monolayer on a bilayered surface (RB-TUA-AUT). For a control experiment, we prepared a single RB monolayer attached by an ethanethiol group to a gold surface. In order to assess the feasibility of the present approach with respect to application in molecular electronics, we tested the switching property of the self-assembled monolayers (SAMs) using conducting-probe atomic force microscopy (CP-AFM). The RB monolayer on the bilayered surface exhibited hysteresis, while a single RB monolayer gave an electrical short.