Contactless analysis of surface passivation and charge transfer at the TiO2-Si interface.

Transition metal oxides are pivotal in enhancing surface passivation and facilitating charge transfer (CT) in silicon based photonic devices, improving their efficacy and affordability through interfacial engineering. This study investigates TiO2/Si heterojunctions prepared by atomic layer deposition (ALD) with different pre-ALD chemical and post-ALD thermal treatments, exploring their influence on the surface passivation and the correlation with the CT at the TiO2-Si interface. Surface passivation quality is evaluated by the photoconductance decay method to study the effective carrier lifetime, while CT from Si to TiO2 is examined by transient reflectance spectroscopy. Surprisingly, the as-deposited TiO2 on HF-treated n-Si (without interfacial SiOx) demonstrates superior surface passivation with an effective lifetime of 1.23 ms, twice that of TiO2/SiOx/n-Si, and a short characteristic CT time of 200 ps, tenfold faster than that of TiO2/SiOx/n-Si. Post-ALD annealing at temperatures approaching the TiO2 crystallization onset re-introduces the SiOx layers in HF-treated samples and induces chemical and structural changes in all the samples which decrease passivation and prolong the CT time and are hence detrimental to the photonic device performance.

Transient Absorption Spectroscopy of Films: Impact of Refractive Index.

Transient absorption spectroscopy is a powerful technique to study the photoinduced phenomena in a wide range of states from solutions to solid film samples. It was designed and developed based on photoinduced absorption changes or that photoexcitation triggers a chain of reactions with intermediate states or reaction steps with presumably different absorption spectra. However, according to general electromagnetic theory, any change in the absorption properties of a medium is accompanied by a change in the refractive properties. Although this photoinduced change in refractive index has a negligible effect on solution measurements, it may significantly affect the measured response of thin films. In this Perspective paper, we examine why and how the measured responses of films differ from their expected "pure" absorption responses. The effect of photoinduced refractive index change can be concluded and studied by comparing the transmitted and reflected probe light responses. Another discussed aspect is the effect of light interference on thin films. Finally, new opportunities of monitoring the photocarrier migration in films and studying nontransparent samples using the reflected probe light response are discussed. Most of the examples provided in this article focus on studies involving perovskite, TiO2, and graphene-based films, but the general discussion and conclusions can be applicable to a wide range of semiconductor and thin metallic films.

Effect of Single-Crystal TiO2/Perovskite Band Alignment on the Kinetics of Electron Extraction.

The kinetics of electron extraction at the electron transfer layer/perovskite interface strongly affects the efficiency of a perovskite solar cell. By combining transient absorption and time-resolved photoluminescence spectroscopy, the electron extraction process between FA0.83Cs0.17Pb(I0.83Br0.17)3 and TiO2 single crystals with different orientations of (100), (110), and (111) were probed from subpicosecond to several hundred nanoseconds. It was revealed that the band alignment between the constituents influenced the relative electron extraction process. TiO2(100) showed the fastest overall and hot electron transfer, owing to the largest conduction band and Fermi level offset compared to FA0.83Cs0.17Pb(I0.83Br0.17)3. It was found that an early electron accumulation in these systems can have an influence on the following electron extraction on the several nanosecond time scale. Furthermore, the existence of a potential barrier at the TiO2/perovskite interface was also revealed by performing excitation fluence-dependent measurements.

Enhancing the Microstructure of Perovskite-Inspired Cu-Ag-Bi-I Absorber for Efficient Indoor Photovoltaics.

Lead-free perovskite-inspired materials (PIMs) are gaining attention in optoelectronics due to their low toxicity and inherent air stability. Their wide bandgaps (≈2 eV) make them ideal for indoor light harvesting. However, the investigation of PIMs for indoor photovoltaics (IPVs) is still in its infancy. Herein, the IPV potential of a quaternary PIM, Cu2 AgBiI6 (CABI), is demonstrated upon controlling the film crystallization dynamics via additive engineering. The addition of 1.5 vol% hydroiodic acid (HI) leads to films with improved surface coverage and large crystalline domains. The morphologically-enhanced CABI+HI absorber leads to photovoltaic cells with a power conversion efficiency of 1.3% under 1 sun illumination-the highest efficiency ever reported for CABI cells and of 4.7% under indoor white light-emitting diode lighting-that is, within the same range of commercial IPVs. This work highlights the great potential of CABI for IPVs and paves the way for future performance improvements through effective passivation strategies.

There is plenty of room at the top: generation of hot charge carriers and their applications in perovskite and other semiconductor-based optoelectronic devices.

Hot charge carriers (HC) are photoexcited electrons and holes that exist in nonequilibrium high-energy states of photoactive materials. Prolonged cooling time and rapid extraction are the current challenges for the development of future innovative HC-based optoelectronic devices, such as HC solar cells (HCSCs), hot energy transistors (HETs), HC photocatalytic reactors, and lasing devices. Based on a thorough analysis of the basic mechanisms of HC generation, thermalization, and cooling dynamics, this review outlines the various possible strategies to delay the HC cooling as well as to speed up their extraction. Various materials with slow cooling behavior, including perovskites and other semiconductors, are thoroughly presented. In addition, the opportunities for the generation of plasmon-induced HC through surface plasmon resonance and their technological applications in hybrid nanostructures are discussed in detail. By judiciously designing the plasmonic nanostructures, the light coupling into the photoactive layer and its optical absorption can be greatly enhanced as well as the successful conversion of incident photons to HC with tunable energies can also be realized. Finally, the future outlook of HC in optoelectronics is highlighted which will provide great insight to the research community.

B-Site Co-Alloying with Germanium Improves the Efficiency and Stability of All-Inorganic Tin-Based Perovskite Nanocrystal Solar Cells.

Colloidal lead-free perovskite nanocrystals have recently received extensive attention because of their facile synthesis, the outstanding size-tunable optoelectronic properties, and less or no toxicity in their commercial applications. Tin (Sn) has so far led to the most efficient lead-free solar cells, yet showing highly unstable characteristics in ambient conditions. Here, we propose the synthesis of all-inorganic mixture Sn-Ge perovskite nanocrystals, demonstrating the role of Ge2+ in stabilizing Sn2+ cation while enhancing the optical and photophysical properties. The partial replacement of Sn atoms by Ge atoms in the nanostructures effectively fills the high density of Sn vacancies, reducing the surface traps and leading to a longer excitonic lifetime and increased photoluminescence quantum yield. The resultant Sn-Ge nanocrystals-based devices show the highest efficiency of 4.9 %, enhanced by nearly 60 % compared to that of pure Sn nanocrystals-based devices.

Monitoring Charge Carrier Diffusion across a Perovskite Film with Transient Absorption Spectroscopy.

We have developed a new noninvasive optical method for monitoring charge carrier diffusion and mobility in semiconductor thin films in the direction perpendicular to the surface which is most relevant for devices. The method is based on standard transient absorption measurements carried out in reflectance and transmittance modes at wavelengths below the band gap where the transient response is mainly determined by the change in refractive index, which in turn depends on the distribution of photogenerated carriers across the film. This distribution is initially inhomogeneous because of absorption at the excitation wavelength and becomes uniform over time via diffusion. By modeling these phenomena we can determine the diffusion constant and respective mobility. Applying the method to a 500 nm thick triple cation FAMACs perovskite film revealed that homogeneous carrier distribution is established in few hundred picoseconds, which is consistent with mobility of 66 cm2 (V s)-1.

Refractive index change dominates the transient absorption response of metal halide perovskite thin films in the near infrared.

Perovskites have lately attracted a lot of attention as promising materials for the next-generation of efficient, low-cost, and solution processable optoelectronics. Their complex transient photophysics, in time scales ranging from femtoseconds to seconds, have been widely investigated. However, in most of the reported works the spectral window of ultrafast transient absorption (TA) spectroscopy of perovskite films is limited to the visible region, hence missing crucial information coming from the near-infrared (NIR). Furthermore, the measured TA responses are affected by light interference in a thin perovskite layer making data interpretation a challenge even in the visible part of the spectrum. Here, we demonstrate a method that allows us to separately obtain the changes in absorption and refractive index from conventional transmission and reflection pump-probe measurements. We show that the contribution of the absorption change to the response of metal halide perovskite thin films in the NIR is much smaller than that of the refractive index change. Furthermore, the spectral shape of TA responses in the NIR range is predominantly determined by perovskite layer thickness and its refractive index. However, the time profile of the responses bears important information on the carrier dynamics and makes the NIR a useful range to study perovskite photophysics.