Second-harmonic scanning microscopy of domains in Al wire bonds in IGBT modules.

Scanning second harmonic generation microscopy has been used to investigate crystallographic orientation of the grain structure in Al wire bonds in insulated gate bipolar transistor modules. It was shown that the recorded second harmonic microscopy images revealed the grain structure of the Al sample. Additional information of the individual grain orientation was achieved by using simple interpretations of the recorded rotational anisotropy.