RESUMO
The capabilities to tune the conduction properties of materials by doping or electric fields are essential for the design of electronic devices. However, in two-dimensional materials substitutional doping has been achieved in only a few systems, such as Nb substitutional doping in MoS2. Surface charge transfer is still one of the popular ways to control whether the conduction is dominated by holes or electrons. Here, we demonstrate that a capping layer of cross-linked poly(methyl methacrylate) modifies the potential in a black phosphorus (BP) layer so that conduction in the absence of an external electric field is dominated by electrons, rather than holes. Using this technique to form adjoining regions dominated by hole and electron conduction, a family of novel planar devices, such as BP-gated diodes, BP bidirectional rectifier, and BP logic inverters, can be fabricated. The devices are potentially useful for electronic applications, including rectification and switching.
RESUMO
A multiple drop-casting method of growing the ultralong dibenzo-tetrathiafulvalene (DB-TTF) micro/nanowire arrays has been developed which has the success ratio as high as 94%. This method enables the arrays with a length over a few hundreds of micrometers to locate between droplets with the definite orientation. The width of the micro/nanowires is controlled via tuning the concentration of DB-TTF solution in dichloromethane. The large-scale arrays can be grown onto Si, SiO2, glass, and the flexible polyethylene terephthalate (PET) substrates. These results show the promising potential of this facile solution-based process for the growth of the high-quality organic micro/nanowires, the fabrication of high-performance and flexible devices, and the fabrication of controlled assemblies of nanoscale circuits for fundamental studies and future applications.
