Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer.

Silicon carbide (SiC) has outstanding physical properties therefore, diodes based on SiC are being considered for many radiation detection applications such as particle accelerator experiments and medical dosimetry. Moreover, by reducing the metal on the surface of the diode there is the potential to enhance its performance in some fields where the presence of metal is detrimental. To this end, SiC detectors with an epitaxially-grown graphene layer (EG), that substitutes the metallic contact, in the sensitive region were produced at IMB-CNM, profiting from the conductivity of the mono-atomic layer material. To isolate the effect of the graphene on the charge collection, samples without graphene were produced in parallel. In this paper, the effect of EG on Silicon Carbide p-in-n radiation detectors is studied in terms of charge collection with a radioactive source and by means of the transient current technique (TCT), which allows for position-dependent signal formation analysis. As a result of the former, we show the capability of the EG-SiC sensor for charge collection after signal integration, to a resolution close to that of a sensor fully metallised. Moreover, from the TCT studies, we observe uniform charge collection across the active region, as well as an up-to ∼ 40% transient amplitude damping which, compared with the ∼ 90% on the sample containing no metallic contact, proves that the presence of graphene benefits the performance of the device and that the technology is viable for radiation detection as an alternative to metal.

State-of-the-art silicon carbide diode dosimeters for ultra-high dose-per-pulse radiation at FLASH radiotherapy.

Objective.The successful implementation of FLASH radiotherapy in clinical settings, with typical dose rates >40 Gy s-1, requires accurate real-time dosimetry.Approach.Silicon carbide (SiC) p-n diode dosimeters designed for the stringent requirements of FLASH radiotherapy have been fabricated and characterized in an ultra-high pulse dose rate electron beam. The circular SiC PiN diodes were fabricated at IMB-CNM (CSIC) in 3µm epitaxial 4H-SiC. Their characterization was performed in PTB's ultra-high pulse dose rate reference electron beam. The SiC diode was operated without external bias voltage. The linearity of the diode response was investigated up to doses per pulse (DPP) of 11 Gy and pulse durations ranging from 3 to 0.5µs. Percentage depth dose measurements were performed in ultra-high dose per pulse conditions. The effect of the total accumulated dose of 20 MeV electrons in the SiC diode sensitivity was evaluated. The temperature dependence of the response of the SiC diode was measured in the range 19 °C-38 °C. The temporal response of the diode was compared to the time-resolved beam current during each electron beam pulse. A diamond prototype detector (flashDiamond) and Alanine measurements were used for reference dosimetry.Main results.The SiC diode response was independent both of DPP and of pulse dose rate up to at least 11 Gy per pulse and 4 MGy s-1, respectively, with tolerable deviation for relative dosimetry (<3%). When measuring the percentage depth dose under ultra-high dose rate conditions, the SiC diode performed comparably well to the reference flashDiamond. The sensitivity reduction after 100 kGy accumulated dose was <2%. The SiC diode was able to follow the temporal structure of the 20 MeV electron beam even for irregular pulse estructures. The measured temperature coefficient was (-0.079 ± 0.005)%/°C.Significance.The results of this study demonstrate for the first time the suitability of silicon carbide diodes for relative dosimetry in ultra-high dose rate pulsed electron beams up to a DPP of 11 Gy per pulse.

First use of silicon carbide detectors with graphene-enhanced contacts for medical dosimetry.

Silicon Carbide (SiC) is a radiation hard wide bandgap semiconductor, which makes it an interesting alternative for radiation detector fabrication, with potential applications such as High Energy Physics, synchrotron and radiotherapy instrumentation. In addition, by reducing the amount of metal over the active area of said detectors (typically used for electrical connectivity with the implant of the pn-junction) unwanted effects from secondary interactions which can affect the accuracy of the measurement can be diminished, essential to meet the medical standards of precision. In this article, the use of epitaxially-grown graphene is explored as an alternative to metallic contacts with these prototypes. To this end, the first prototypes of SiC diodes with epitaxial graphene contacts were produced at IMB-CNM for radiation detection,along with reference devices. In order to characterise the feasibility of the technology in the medical application, the dose rate linearity of the SiC device with graphene was measured in a radiotherapy Linac in the dose rate range of 1-6 Gy/min. The response of the device was compared to that observed on devices with similar geometries reported elsewhere. To fully characterise the devices, the same exercise was repeated in a laboratory X-ray tube. Under the later set-up, the prototype is compared against a device with a fully metallised active region.

Inverse LGAD (iLGAD) Periphery Optimization for Surface Damage Irradiation.

Pixelated LGADs have been established as the baseline technology for timing detectors for the High Granularity Timing Detector (HGTD) and the Endcap Timing Layer (ETL) of the ATLAS and CMS experiments, respectively. The drawback of segmenting an LGAD is the non-gain area present between pixels and the consequent reduction in the fill factor. To overcome this issue, the inverse LGAD (iLGAD) technology has been proposed by IMB-CNM to enhance the fill factor and provide excellent tracking capabilities. In this work, we explore the use of iLGAD sensors for surface damage irradiation by developing a new generation of iLGADs, the periphery of which is optimized to improve the performance of irradiated sensors. The fabricated iLGAD sensors exhibit good electrical performances before and after X-ray irradiation.

Study of Ionization Charge Density-Induced Gain Suppression in LGADs.

Gain suppression induced by excess carriers in Low Gain Avalanche Detectors (LGADs) has been investigated using 3 MeV protons in a nuclear microprobe. In order to modify the ionization density inside the detector, Ion Beam Induced Current (IBIC) measurements were performed at different proton beam incidence angles between 0° and 85°. The experimental results have been analyzed as a function of the ionization density projected on the multiplication layer, finding that the increase of ionization density leads to greater gain suppression. For bias voltages close to the gain onset value, this decrease in gain results into a significant distortion of the transient current waveforms measured by the Time-Resolved IBIC (TRIBIC) technique due to a deficit in the secondary holes component. For angles of incidence such that the Bragg peak falls within the sensitive volume of the detector, the formation of microplasmas modifies the behavior of the gain curves, producing an abrupt decrease in gain as the angle increases.

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM.

This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.

Silicon 3D Microdetectors for Microdosimetry in Hadron Therapy.

The present overview describes the evolution of new microdosimeters developed in the National Microelectronics Center in Spain (IMB-CNM, CSIC), ranging from the first ultra-thin 3D diodes (U3DTHINs) to the advanced 3D cylindrical microdetectors, which have been developed over the last 10 years. In this work, we summarize the design, main manufacture processes, and electrical characterization of these devices. These sensors were specifically customized for use in particle therapy and overcame some of the technological challenges in this domain, namely the low noise capability, well-defined sensitive volume, high spatial resolution, and pile-up robustness. Likewise, both architectures reduce the loss of charge carriers due to trapping effects, the charge collection time, and the voltage required for full depletion compared to planar silicon detectors. In particular, a 3D‒cylindrical architecture with electrodes inserted into the silicon bulk and with a very well‒delimited sensitive volume (SV) mimicked a cell array with shapes and sizes similar to those of mammalian cells for the first time. Experimental tests of the carbon beamlines at the Grand Accélérateur National d'Lourds (GANIL, France) and Centro Nazionale Adroterapia Oncologica (CNAO, Italy) showed the feasibility of the U3DTHINs in hadron therapy beams and the good performance of the 3D‒cylindrical microdetectors for assessing linear energy distributions of clinical beams, with clinical fluence rates of 5 × 107 s-1cm-2 without saturation. The dose-averaged lineal energies showed a generally good agreement with Monte Carlo simulations. The results indicated that these devices can be used to characterize the microdosimetric properties in hadron therapy, even though the charge collection efficiency (CCE) and electronic noise may pose limitations on their performance, which is studied and discussed herein. In the last 3D‒cylindrical microdetector generation, we considerably improved the CCE due to the microfabrication enhancements, which have led to shallower and steeper dopant profiles. We also summarize the successive microdosimetric characterizations performed with both devices in proton and carbon beamlines.