RESUMO
We present the digital data transmission performance of few-layer graphene ribbon interconnects grown by chemical vapor deposition which are potential candidates for interconnect applications, and serve as a replacement for problematic metal interconnects at small length scales and overcome their limitations in data transmission performance. Graphene ribbon interconnects having a mobility of 2,180 cm2V(-1) s(-1) can sustain data rates up to 90 megabits per second at 100 nm length. These interconnects behave as RLC lines, thus the bandwidth is inversely proportional to resistance caused by defects in the graphene layers and the inductance and capacitance of the interconnect lines. Improving the graphene mobility to highest measured values (approximately 200,000 cm2V(-1) s(-1)) and using structures with multiple coplanar transmission lines in parallel could carry the bandwidth beyond the terabits per second level.
RESUMO
In this work high quality crystalline In(1_x)Sb(x) nanowires (NWs) are synthesized via a template-based electrochemistry method. Energy dispersive spectroscopy studies show that composition modulated In(1-x)Sb(x) (x approximately 0.5 or 0.7) nanowires can be attained by selectively controlling the deposition potential during growth. Single In(1-x)Sb(x) nanowire field effect transistors (NW-FETs) are fabricated to study the electrical properties of as-grown NWs. Using scanning gate microscopy (SGM) as a local gate the I(ds)-V(ds) characteristics of the fabricated devices are modulated as a function of the applied gate voltage. Electrical transport measurements show n-type semiconducting behavior for the In0.5Sb0.5 NW-FET, while a p-type behavior is observed for the In0.3Sb0.7 NW-FET device. The ability to grow composition modulated In(1-x)Sb(x) NWs can provide new opportunities for utilizing InSb NWs as building blocks for low-power and high speed nanoscale electronics.
